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Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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![An n+-polysilicon-gate p-channel MOSFET is made on an n-type substrate with
Na=5x1016 cm³. The SiO2 thickness in 100Å, and the effective interface charge is
Q=2x10'e/cm. Calculate the flat-band voltage VFB, and the threshold voltage VT.
Sketch the low frequency C-V and give numbers for the scales, such as the
minimum and the maximum capacitance.
Note: The SiO2 relative dielectric constant is 3.9.](https://content.bartleby.com/qna-images/question/6a21140c-6916-4fa4-a61a-2a47bb5b2c0f/0aff066f-81c5-44f2-af49-4cccc303bc07/1vluwp7_thumbnail.jpeg)
Transcribed Image Text:An n+-polysilicon-gate p-channel MOSFET is made on an n-type substrate with
Na=5x1016 cm³. The SiO2 thickness in 100Å, and the effective interface charge is
Q=2x10'e/cm. Calculate the flat-band voltage VFB, and the threshold voltage VT.
Sketch the low frequency C-V and give numbers for the scales, such as the
minimum and the maximum capacitance.
Note: The SiO2 relative dielectric constant is 3.9.
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