An ideal rectifying contact is formed by depositing gold on n-type silicon doped at 1015 cm-3. At T = 300 K, determine the width of the depletion region. W = 9.540 X 10-4 cm W = 2.244 X 10-4 cm W = 1.033 X 10-4 cm OW = 4.151 X 10-4 cm
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