Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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An enhancement-Type MOSFET is fabricated o 0.4μμm Process in with L=0.8μμm and w= 16 μm. find the value of Is for Vov = 0.5V and VAS = IV. Do not neglect CLM. If Yps is increased by 2-2V what Corresponding change in ID. is the Parameter VIHO не сох VA N-C4 0.7V 200MA/12 to Yum
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Transcribed Image Text:An enhancement-Type MOSFET is fabricated o 0.4μμm Process in with L=0.8μμm and w= 16 μm. find the value of Is for Vov = 0.5V and VAS = IV. Do not neglect CLM. If Yps is increased by 2-2V what Corresponding change in ID. is the Parameter VIHO не сох VA N-C4 0.7V 200MA/12 to Yum
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Step 2: Determining drain current with channel length modulation:
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Step 3: Determining increment of current with increment of drain source voltage:
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