An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mP = 5.18 × 10-26 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 53 cm before they strike the silicon layer with velocity vP = 170 m/s. re = 53 cm vP = 170 m/s
An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mP = 5.18 × 10-26 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 53 cm before they strike the silicon layer with velocity vP = 170 m/s. re = 53 cm vP = 170 m/s
Physics for Scientists and Engineers, Technology Update (No access codes included)
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Chapter25: Electric Potential
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Problem 25.52P: Lightning can be studied with a Van de Graaff generator, which consists of a spherical dome on which...
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An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mP = 5.18 × 10-26 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 53 cm before they strike the silicon layer with velocity vP = 170 m/s.
re = 53 cm
vP = 170 m/s
Part (a) Enter an expression for the potential difference ΔV, in volts, between the initial and final points across the vacuum chamber. | ||||
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