An abrupt silicon P-N junction is doped with acceptor concentration, N₁ = 5 x 1016 cm-³ and donor concentration, N₁ = 8 x 1016 cm³ respectively. Determine the saturation current, Is assuming that the N-type region is much smaller than the minority carrier diffusion length with a length of /= 1 μm and assuming a "long" P-type region, sufficiently enough for the minority carriers to diffuse in. Use μ₂ = 1450 cm² /Vs and μ₁ = 500 cm² /Vs in your calculation. The minority carrier lifetime in P-type is given as 30 μs and the height of the structure = width of the structure = 100 µm. Intrinsic carrier density is 1 x 101⁰ cm-³.

An abrupt silicon P-N junction is doped with acceptor concentration, N₁ = 5 x 1016 cm-³ and donor concentration, N₁ = 8 x 1016 cm³ respectively. Determine the saturation current, Is assuming that the N-type region is much smaller than the minority carrier diffusion length with a length of /= 1 μm and assuming a "long" P-type region, sufficiently enough for the minority carriers to diffuse in. Use μ₂ = 1450 cm² /Vs and μ₁ = 500 cm² /Vs in your calculation. The minority carrier lifetime in P-type is given as 30 μs and the height of the structure = width of the structure = 100 µm. Intrinsic carrier density is 1 x 101⁰ cm-³.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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10. Consider a step pn junction made of silicon. Carrier lifetimes are given as T, = 10-s and T, = 10 is. Assume long diode, i.e. long quasi-neutral regions. What must be the doping density ratio, NA/Np, in order to have 95% of the total current in the depletion region carried by electrons? Answers within 5% error will be considered correct. Enter answer here
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