A square silicon chip (k = 150 W/m • K) has side width w = 5 mm and thickness z = 1 mm. The chip is mounted on a substrate so that its sides and interior surface are insulated. while that the front surface is exposed to a cooling fluid. If 4 W is dissipated from the circuitry mounted on the back surface of the chip, what is the difference in steady-state temperatures between the bottom and front surfaces?

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
8th Edition
ISBN:9781305387102
Author:Kreith, Frank; Manglik, Raj M.
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Chapter3: Transient Heat Conduction
Section: Chapter Questions
Problem 3.1P: Consider a flat plate or a plane wall with a thickness L and a long cylinder of radius r0. Both of...
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A square silicon chip (k = 150 W/m • K) has side width w = 5 mm and thickness z = 1 mm.
The chip is mounted on a substrate so that its sides and interior surface are insulated. while
that the front surface is exposed to a cooling fluid.
If 4 W is dissipated from the circuitry mounted on the back surface of the chip, what is the difference in
steady-state temperatures between the bottom and front surfaces?

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