A silicon semiconductor material is to be designed such that the majority carrier electron concentration is no = 7 x 10¹5 cm ³. Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron concentration? What is the intrinsic carrier concentration such that the minority carrier concentration, po = 106 cm ³.

TRUE OR FALSE A. Diffusion of charge carriers in a p-n junction is dependent on the concentration gradient of majority charge carriers. B. The Schottky contact in a metal-semiconductor system occurs when the p-type semiconductor contacts a metal with a higher work function than it.

What is a highly doped n semiconductor? What is a doped p semiconductor?

Intrinsic carrier concentration of pure silicon at 300 K will be .................?

a) With the aid of illustrations and using Silicon, describe what an intrinsic semiconductor material is. (b)  With the aid of illustrations and using Silicon, describe what an extrinsic N type            semiconductor material is. (c)  With the aid of illustrations and using Silicon, describe what an extrinsic P type         semiconductor material is. (d)  With the aid of illustrations, describe what happens when P and N materials are        joined/fused together and what is formed across the join. Then describe and        illustrate how the formation at the junction can be controlled. (e)   Give clear illustrations of characteristics for GERMANIUM and SILICON DIODES and          say what is the threshold value (Vt) for Silicon and Germanium.