A Si sample is doped with donor impurities Np = 8*1016/cm3,then acceptor impurities are added with NA =8*1017/cm, We give: n; = 1010 / cm, q = 1.6*10-19 C, Hn 1350 cm?/V.s, Hp = 350 cm²/.s, Ep = 8.85*10-14 and € = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region on is: a. 172.8 1/(Ohm.cm) b. 44.8 1/(Ohm.cm) C. 4.48 1/(Ohm.cm) d. 17.28 1/(Ohm.cm)
A Si sample is doped with donor impurities Np = 8*1016/cm3,then acceptor impurities are added with NA =8*1017/cm, We give: n; = 1010 / cm, q = 1.6*10-19 C, Hn 1350 cm?/V.s, Hp = 350 cm²/.s, Ep = 8.85*10-14 and € = 11.5, also kT = 26 meV and W = 0.36 um then: The conductivity of the n region on is: a. 172.8 1/(Ohm.cm) b. 44.8 1/(Ohm.cm) C. 4.48 1/(Ohm.cm) d. 17.28 1/(Ohm.cm)
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A Si sample is doped with donor impurities Np = 8*1016/cm3,then acceptor impurities are added with NA =8*1017/cm, We give: n; = 1010 / cm, q = 1.6*10-19 C, Hn 1350 cm?/V.s, Hp = 350 cm²/.s, Ep = 8.85*10-14 and € = 11.5, also kT = 26 meV and W = 0.36 um then:
The conductivity of the n region on is:
a. 172.8 1/(Ohm.cm)
b. 44.8 1/(Ohm.cm)
C. 4.48 1/(Ohm.cm)
d. 17.28 1/(Ohm.cm)
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