A piece of silicon doped with Boron experiences an electric field equal to 0.1 V/um. Calculate the velocity of holes in this material. Pn=1000 cm/V.s, Po = 300 cm/V.s. %3D Select one: O a. 30 m/s O b. 3x 10' m/s Oc. None of these O d. 3x 105 m/s O e. 3000 m/s

A piece of silicon doped with Boron experiences an electric field equal to 0.1 V/um. Calculate the velocity of holes in this material. Pn=1000 cm/V.s, Po = 300 cm/V.s. %3D Select one: O a. 30 m/s O b. 3x 10' m/s Oc. None of these O d. 3x 105 m/s O e. 3000 m/s

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter19: Capacitors

Section: Chapter Questions

Problem 3RQ: A capacitor uses air as a dielectric and has a capacitance of 3 F. A dielectric material is inserted...

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Concept explainers

Capacitor

The capacitor is an element used to store electrical energy in the electrical field. A capacitor is a form of passive energy.

Question

A piece of silicon doped with Boron experiences an electric field equal to 0.1 V/um. Calculate the velocity of holes in this
material. Pn=1000 cm/N.s, H, = 300 cm/Vs.
%3D
Select one:
O a. 30 m/s
O b. 3x 10' m/s
Oc. None of these
O d. 3x 105 m/s
e. 3000 m/s

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