A phosphorous doped silicon semiconductor (doping density: 107/cm³) is heated from 100°C to 200°C. (a) Position of Fermi level moves towards conduction band (b) Position of dopant level moves towards conduction band (c) Position of Fermi level moves towards middle of energy gap (d) Position of dopant level moves towards middle of energy gap
A phosphorous doped silicon semiconductor (doping density: 107/cm³) is heated from 100°C to 200°C. (a) Position of Fermi level moves towards conduction band (b) Position of dopant level moves towards conduction band (c) Position of Fermi level moves towards middle of energy gap (d) Position of dopant level moves towards middle of energy gap
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Transcribed Image Text:A phosphorous doped silicon semiconductor (doping density: 10"/cm') is heated from
100°C to 200°C.
(a) Position of Fermi level moves towards conduction band
(b) Position of dopant level moves towards conduction band
(c) Position of Fermi level moves towards middle of energy gap
(d) Position of dopant level moves towards middle of energy gap
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