A particular pn junction at T = 300 K is doped with impurity concentrations of N₁ = 1.2 x 10¹4 cm³ and N₁ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is po = 1.1 x 10¹4 cm³³. Consider the resistivity of the n-side is 40 N-cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 × 10-¹⁹ and the electric permittivity of the semiconductor € = 13.1€, with € = 8.85 x 10-¹4 F/cm. Determine the intrinsic carrier concentration. ?

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A particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4
cm³ and N₁ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is po = 1.1 x 10¹4
cm-³. Consider the resistivity of the n-side is 40 -cm and of the p-side is 20 -cm. Assume
complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 × 10-1⁹ and
the electric permittivity of the semiconductor € = 13.1€, with = 8.85 × 10-14 F/cm.
Determine the intrinsic carrier concentration. ?
Transcribed Image Text:A particular pn junction at T = 300 K is doped with impurity concentrations of Na = 1.2 x 10¹4 cm³ and N₁ = 2 x 10¹4 cm³. The thermal equilibrium hole concentration is po = 1.1 x 10¹4 cm-³. Consider the resistivity of the n-side is 40 -cm and of the p-side is 20 -cm. Assume complete ionoization and let the thermal voltage V₂ = 25 mV, the electron charge 1.6 × 10-1⁹ and the electric permittivity of the semiconductor € = 13.1€, with = 8.85 × 10-14 F/cm. Determine the intrinsic carrier concentration. ?
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