A npn silicon transistor is being biased using the voltage divider method. The circuit details are as follows :- VCC = 15 V ,ß = 265,VBE = 0.65 V, RB1 = 10.3k , RB2 = 1k8 , RC = 570 Q , %3D %3D %3D RE = 124 Q %3D Calculate the voltage (in V) developed across collector resistor, RC.

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