Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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VOLTE O
O© 28% O1:19
A tlzprod.dut.ac.za/mod/q
33
Question 25
Not yet answered
Marked out of 1.00
P Flag question
A npn silicon transistor is being
biased using the voltage divider
method. The circuit details are as
follows :-
VCC = 15 V ,ß = 265 ,VBE = 0.65 V,
RB1 = 10.3k , RB2 = 1k8 , RC = 570 Q ,
%3D
%3D
%3D
RE = 124 Q
Calculate the voltage (in V)
developed across collector resistor,
RC.
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Transcribed Image Text:VOLTE O O© 28% O1:19 A tlzprod.dut.ac.za/mod/q 33 Question 25 Not yet answered Marked out of 1.00 P Flag question A npn silicon transistor is being biased using the voltage divider method. The circuit details are as follows :- VCC = 15 V ,ß = 265 ,VBE = 0.65 V, RB1 = 10.3k , RB2 = 1k8 , RC = 570 Q , %3D %3D %3D RE = 124 Q Calculate the voltage (in V) developed across collector resistor, RC.
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