A new semiconductor has N, = 1019 cm, N, = 5x 108 cm3, and E, 2 eV. If it is doped with 107 donors (fully ionized), calculate the electron, hole, and in- trinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of Ep. ст %3D %3D %3D Calculate the electron, hole and intrinsic carrier concentrations. Sketch energy band diagram.

1. In semiconductors, how is conductivityaffected by impurities (doping) and temperature?2. Phosphorous is added to high purity silicon to produce a1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons andof the gaps are the same as for the intrinsic material?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?

Explain how a metal-oxide semiconductor field-effect transistor (MOSFET) acts as a transistor. Explain how it functions as a transistor by describing its parts and how they work.

how does a semiconductor behaves at 0K? Explain your answer.