A new semiconductor has N, = 1019 cm, N, = 5x 108 cm3, and E, 2 eV. If it is doped with 107 donors (fully ionized), calculate the electron, hole, and in- trinsic carrier concentrations at 627°C. Sketch the simplified band diagram, showing the position of Ep. ст %3D %3D %3D Calculate the electron, hole and intrinsic carrier concentrations. Sketch energy band diagram.

1. In semiconductors, how is conductivityaffected by impurities (doping) and temperature?2. Phosphorous is added to high purity silicon to produce a1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons andof the gaps are the same as for the intrinsic material?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?

Figure 1 shows the absorption coefficient for several direct and indirect bandgap semiconductors. Analyses these figure in term of indirect bandgap materials. ABSORPTION COEFFICIENT (cm²) 106 105. 104 103. 10² 10 0.2 3 GaP 2 Si 0.6 PHOTON ENERGY (CV) 1.5 GaAs InP Figure 1 In0.53 Ga0.47As 1.4 WAVELENGTH (μm) 0.7 1.8

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Determine the amount of arsenic that must be combined with 1 kg of gallium to produce a p-type semiconductor with an electrical conductivity of 500 ohm21 · cm21 at 25°C. The lattice parameter of GaAs is about 5.65 Å, and GaAs has the zincblende structure.

Explain how a metal-oxide semiconductor field-effect transistor (MOSFET) acts as a transistor. Explain how it functions as a transistor by describing its parts and how they work.

Use T if it's True and F if it's False. Justify  I. A semiconductor is characterized by having a very wide forbidden band, between conduction and valence.II. The band of the Energetic Interval where there are those electrons that can move freely and are free from the attraction of the atom is called conduction.III. In a semiconductor with donor atoms (for example P in Si), the donor level is just below the conduction band.IV. A diode will conduct current in only one direction and act as an open circuit when the current tries to move in the opposite direction.

how does a semiconductor behaves at 0K? Explain your answer.

Phosphorous was added to high purity silicon to produce a 10 ? charge carrier concentration at room temperature. Calculate the conductivity of this material at room temperature, assuming that the mobility of electrons and hollows is the same as for intrinsic material. ?e =0.14 y ?h=0.048 ?-3/V s. ? = 2240(Ω − ?)-1