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I only need help with part e)
Transcribed Image Text:A high purity metal with 8.5x1023 free electrons per cm³ has conductivity at room
temperature of 298K = 5.92x107 S/m. A wire 1 mm in diameter and 100 cm long, was
produced from this metal by wire drawing process. The process introduces many
dislocations to the drawn material.
Calculate:
a) the resistance R of the wire (in 2) at room temperature
b) If the wire is carrying a current of 1.3 Amps, what is the voltage U applied to the wire
and the electrical field strength & developed within the wire?
c) Calculate the relaxation time of electron between collisions =
mv
d) Calculate the mean free path of electron between collisions=vy T
eɛ
e) The wire was cooled to 4 K and its conductivity was measured at 4 K. It was 2000x
higher than at room temperature i.e. σ4K = 1.18x10" S/m. Assuming that only
dislocations contribute to the scattering, calculate density of dislocations Cp stored in the
wire.
the specific scattering of dislocation line is 1x10-19 cm³
- the phonon contribution to the resistivity at 298K is 1.5x10-62cm
-the phonon contribution to the resistivity at 78K is 1.5x10-72cm
the phonon contribution to the resistivity at 4K is 1.5x10-12 Qcm
f) Discuss very briefly what is the main assumption/correction about the density of
conductive electrons, which is used in the derivation of conductivity in quantum
mechanical theory of conductivity
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