Question 3(a) Figure 2 shows the energy band diagrams of an n- and p-type silicon before contact.Determine the contact potential of the resultant p-n junction, and the depletion width atthermal equilibrium. Given Ne = 2.8× 101º /cm³ , N, = 1.04 × 1019 /cm³ , &, =11.8 x 8.85 x 10-14 F/cm, Eg = 1.12 eV, and e = 1.6 x 10-19C.- Ec† 021 eV0.24 ev- EF- EyEy -Figure 2(b) Boron is implanted into an n-type Si (Na = 1 × 1016 cm-³) to form an abrupt pn junction.The p-type region dopant concentration is Na = 4 × 101º cm¯3. Given the cross sectionalarea of the diode is 2 × 10-³ cm², n̟ = 1.5 × 101º cm-³, ɛ, = 11.8 x 8.85 x 10-14 F/cm, and e = 1.6 x 10-19 C.Determine the build-in potential (Vbj), space charge width (Xp, Xp), space charge (Q) andelectric field (E) at equilibrium. Draw the sketch of charge density and E(x) as a functionof the distance, x.

Given : Note : It is a kind notice that according to the guidelines of the company if the subparts…

(a) Figure 2 shows the energy band diagrams of an n- and p-type silicon before contact. Detemine the contact potential of the resultant p-n junction, and the depletion width at themal equilibrium. Given N. = 2.8 x 1019 /cm³ , N, = 1.04 x 1019 /cm³ , ɛ, = 11.8 x 8.85 x 10-14 F/cm, E, = 1.12 eV, and e = 1.6 x 10-19 C. - Ec 0.21 ev 0.24 ev Ey Ey Figure 2

(a) Figure 2 shows the energy band diagrams of an n- and p-type silicon before contact. Detemine the contact potential of the resultant p-n junction, and the depletion width at themal equilibrium. Given N. = 2.8 x 1019 /cm³ , N, = 1.04 x 1019 /cm³ , ɛ, = 11.8 x 8.85 x 10-14 F/cm, E, = 1.12 eV, and e = 1.6 x 10-19 C. - Ec 0.21 ev 0.24 ev Ey Ey Figure 2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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