A boron implant at 30 keV is done through a gate oxide that is 15nm thick, into a silicon substrate. LSS tables show a boron implant range in oxide at this energy of 100 nm and a standard deviation of 25 nm. Calculate the fraction of boron implant that is absorbed in the oxide.

A boron implant at 30 keV is done through a gate oxide that is 15nm thick, into a silicon substrate. LSS tables show a boron implant range in oxide at this energy of 100 nm and a standard deviation of 25 nm. Calculate the fraction of boron implant that is absorbed in the oxide.

Understanding Motor Controls

4th Edition

ISBN:9781337798686

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter17: Temperature Sensing Devices

Section: Chapter Questions

Problem 14RQ: Assume that a silicon diode is being used as a temperature detector. If its temperature increases,...

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Atomic diffusion in solids

In material science, diffusion can take place in solid, liquid, and gases. In solids, atomic diffusion can take place with the help of thermally activated and randomly vibrating atoms. The atomic diffusion in solids is complex and very slow in comparison to atomic diffusion in liquids and gases because the interatomic distance between the atoms is smaller in solids as compared to liquids and gases.

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