8. An etching solution for silicon wafers is made up of four parts (by volume) of concentrated hydrofluoric acid to one part concentrated nitric acid to three parts concentrated acetic acid. The hydrofluoric acid is 49% (by mass) HF, and has s specific gravity of 1.198; the nitric acid is 70% HNO3, with a specific gravity of 1.413, and the acetic acid is pure CH3CO₂H with a specific gravity of 1.049. a. How many liters of each acid will be required to make up 100kg of etching solution? b. What is the molarity (moles per liter) of HF and HNO3 in the etching solution?
8. An etching solution for silicon wafers is made up of four parts (by volume) of concentrated hydrofluoric acid to one part concentrated nitric acid to three parts concentrated acetic acid. The hydrofluoric acid is 49% (by mass) HF, and has s specific gravity of 1.198; the nitric acid is 70% HNO3, with a specific gravity of 1.413, and the acetic acid is pure CH3CO₂H with a specific gravity of 1.049. a. How many liters of each acid will be required to make up 100kg of etching solution? b. What is the molarity (moles per liter) of HF and HNO3 in the etching solution?
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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