7. A certain transistor has a dc beta (hfE) of 130. If the dc base current is 10 µA, determine re. apc = 0.99.

2. Determine the VCB (i.e., voltage difference between collector C and base B) in the transistor circuit shown in the figure below. The transistor is silicon type (i.e., VBE is 0.7V) and has current gain hEE- 150. (Assume the transistor is working on active region) Rc 100 2 RB 10V Vcc 10 k2 VBR = 5V

A silicon controlled rectifier (SCR) has a forward breakdown voltage of 230 V. When a gate current of 2 mA flows in the gate circuit. If a sinusoidal voltage of 400 V peak is applied, find the following: Firing angle. Average output voltage. Average current for a load resistance of 180 Ohms. Power output

Calculate the sensitivity if the RTD temperature is 877 °C and Resistance as 540.5 ohms. O a. 1.23 O b. 3.70 O c. 0.62