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Q: Problem 1: In a PCM system, the bit error rate due to channel noise is 10-4. Assume that the peak…

A: (a) It is given that the recovered analog signal must be grater than 30dB. For PCM system 6n+1.8≥30…

Q: 1 A 0.18-µm fabrication process is specified to have t_ = 4 nm, µ, = 450 cm’/N • s, and V, = 0.5 V.…

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Q: na superheterodyne receiver, the selected RF signal is converted to IF sign pefore denmodulation,…

A: The answer is a selectivity. A simple capacitor-based filter and coil has a bandwidth that can be…

Q: In the circuit below, Vpp = 5V, R, = 300kn, R2 = 200kn, R3 = 1.5kn and R, = 2kn. The n- channel MOS…

A: The solution is given below

Q: (a) What is the value of C required for fo = 10.7 MHz in the circuit as shown if IC = 10 mA, VCE =…

A: According to policy attempting only first three questions, Center frequency can be calculated as,…

Q: 5. Given a JFET transistor with Ips=10 mA and V, =-4 V, a) Sketch its transfer characteristics.…

A: The Field Effect Transistor (JFET) is a unipolar device and a three-terminal voltage-controlled…

Q: Consider an n-channel MOSFET with parameters: K, = 0.25 mAN, VIN = 1 V, 2 = 0, Cgd = 0.04 pF and Cg…

A: Given; N-channel MOSFET Kn=0.25 mA/V2VTN=1 Vλ=0Cgd=0.04 pFCgs=0.2 pFVGS=3 V

Q: Problem 1: In a PCM system, the bit error rate due to channel noise is 10-4. Assume that the peak…

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Q: Note that ɛox = 3.97ɛo and eşi = 11.7ɛo, kT/q= 0.02588V (room temperature), and ni= 1.45x101°cm 3.…

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Q: (a) If the transistor has V, = 1 V, and k, = 4 mA/V’, verify that the bias circuit establishes Vgs =…

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Q: modulating Signal has a PSO of a Icol e?o. w? 20 S,(w) - the effective band width B of mct) is that…

A: A message signal is transferred from the sender to the receiver end. The signal is transmitted…

Q: Q3) A DS spread-spectrum system transmits in the presence of a tone interference using the spreading…

A:

Q: Q1) Consider a second order all-pole transfer function model, if the desired settling time (5%) is…

A: Given Settling time =0.60 S for 5% tolerance Damping ratio =0.707

Q: 7. We use the relationship W B= k= If W is doubled, then so is B, thus for this circuit we have: B =…

A: Given :   Beta =0.02 A / V²    Vt = 0.6 V    VA = 20 V    IDS = Drain To Source Current…

Q: 7. The substrate of MOSFET is normally connected to the Drain terminal. 8. In the actual…

A: Given  True or false question based on FET devices.  Please find the answer below.

Q: (c) Refer to the circuit in Fig 7.2 for this part of the question: (i) Given Vs = 10 V, Ip = 15 mA,…

A: As per our company guidelines we are supposed to answer only first 3 subpart kindly repost the other…

Q: Q3) Prove that the expression for the stability factor S(Ic.) for the Emitter-stabilized bias…

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Q: 7.53 For the circuit shown in Fig. P7.53, draw a complete small-signal equivalent circuit utilizing…

A: First, draw the small-signal model of the common base circuit of the transistor. For drawing…

Q: parameters 400 A°. A ideal n-channel MOSFET has H, = 525 cm²/V -s , Vy = 0.75 V, t When MOSFET is…

A: MOSFET (Metal oxide Semiconductor Field Effect Transistor ) is Field effect transistor having 4…

Q: Problem #. An MOS transistor with tox = 1.5 nm, a uniform substrate doping of Nd = 5x1018 cm- 3, and…

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Q: 10.3 Starting from the expression of fr for a MOSFET, fr 2æ(C,+C,a) and making the approximation…

A: It is given that: fT=gm2πCgs+Cgd

Q: In the figure shown below, AM modulator contains Nonlinear device followed by band pass filter tuned…

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Q: A second örde frequency (wn) of 6 rad/sec and damping ratio of & = 0.5, the value of peak time (tp)…

A: In question, we have to find out peak time  of second order system..

Q: A certain NMOS transistor has vGS(t) =2 V vDS(t) =5+2 sin(ωt) V iD(t) =3+0.01 sin(ωt) mA Which…

A: since gate to gate source vgs voltage is constant in time, it does not depend on drain current. so…

Q: the total power where P, is the power carried by the sidebands and P, is the total power of the AM…

A: Given condition: Efficiency η of ordinary AM is η=PsPt×100% Where  Ps is power carried by the…

Q: (c) Refer to the circuit in Fig 7.2 for this part of the question: (i) Given Vs = 10 V, Ip = 15 mA,…

A: Brief description : In the above given question they want to know the DC parameters and small signal…

Q: (a) The signal voltage applied across the gatesource terminals of an MOS transistor is given by υgs…

A: (a) Given vgs=VMsin5000πtVGS-VTN=0.75 VVM=150 mV The expression for drain current is given by…

Q: 1. Consider a channel with a white noise power of 10mW. А. power is 100mW, how much is the Shannon…

A: Given Noise power=N=10mW

Q: 7.15 The transistor in the circuit of Fig. P7.15 is biased at a de collector current of 0.3 mA. What…

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Q: Rout Vb Ti T2

A: As mention in the question, the transconductance value gm is different for different manufacturers.…

Q: In the figure shown below, AM modulator contains Nonlinear device followed by band pass filter tuned…

A:

Q: For the MOS amplifier shown in Figure 7, calculate (i) the input resistance and (i) the mid band…

A: First we will do DC analysis to find out gm , then we will do ac analysis to find out input…

Q: What is the minimum bandwidth of the NMOS current mirror as shown if IS = 150 μA, Kn = 25 μA/V2, λ…

A: Given: Source current, Is=100μA Process Trans-conductance parameter kn'=25μA/V2 Process technology…

Q: In the figure shown below, AM modulator contains Nonlinear device followed by band pass filter tuned…

A: In the given figure below, AM modulator contains non-linear device followed by band-pass filter…

Q: Find the Rout resistance... The intemal resistance ro of the MOS transistor will not be neglected...…

A: The given circuit is: The internal resistance ro of the MOS transistor will not be neglected and…

Q: If a MOSFET with W = 6.4 µm and L = 1.7 µm is biased in triode, what is the gate-to-source…

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Q: The superposition theorem is applicable to the analysis and design of the dc and ac components of a…

A: Superposition theorem: it is a general principle that allows us to determine the effect of several…

Q: + 8 V For the MOS transistor based circuit (where . ka = 6 mA/V? and Vth = 1V), you are expected to…

A: For Device OFF VGS<VTVGS<1 For device ON VGS≥VTVGS≥1 Case 1 At RS=0ΩVGS=8V

Q: Given the BJT bias circuit, solve for IE, IB, IC, VO, and β. Let RC=12kΩ, RB=30kΩ, RE=2.5kΩ, VA=50V,…

A: To solve above problem, one should know about DC analysis of BJT. DC analysis of transistor is done…

Q: If a MOSFET with W = 2.7 µm and L = 2.6 µm is biased in triode, what is the gate-to-source…

A: From the question, it is given that A MOSFET is biased in triode W=2.7 μm L=2.6 μm Assumption given…

Q: The gain bandwidth of a He/Ne laser operating at 633nm is ~0.015A. Find the maximum allowable cavity…

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Q: Question 1: For the Mosfet in the circuit shown below: VTp = - 0.8V, and Kp = 200 uA/V2. Find Vs and…

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Q: In the figure shown below, AM modulator contains Nonlinear device followed by band pass filter tuned…

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Q: The depletion type MOSFET transistor in the circuit shown has kn = 2 mA/V2. If RG = 1 MQ, Rs = 1 ko,…

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Q: H.W(23): For the circuits shown below, derive the relations of Avs, Aj, R; , Ro. Ri Ro

A: Since you have posted the multiple questions so we are supposed to answer 1st questions only

Q: Q: Given (Ipss =9 mA) and (Vp = -3.5 V), sketch the transfer characteristics for the JFET…

A: Draw the transfer characteristics for the given JFET transistor,

Q: How can you produce one sideband only? Suggest a method to obtain SSB.

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Q: A 5-V, 10-MHz oscillator have a rise/falltime of 10ns and a 50% duty cycle is applied to a gate.…

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Superposition Theorem

The superposition theorem is applied to linear systems. For such systems, the output from two different inputs equals the sum of the outputs from each input separately. On applying this theorem many times we get the output from any number of inputs equal to the sum of the outputs from the individual inputs separately.