5.44 The NMOS transistor in the circuit of Fig. P5.43 has V₁ = 0.4 V and k, = 4mA/V². The voltages at the source and the drain are measured and found to be -0.55 V and +0.1 V, respectively. What current ID is flowing, and what must the values of R₂ and Rs be? What is the largest value for Rp for which I remains unchanged?

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D5.48 The PMOS transistor in the circuit of Fig. P5.48 has V; = -0.5 V, µ„Cox = 100 µA/V², L = 0.18 µm, and 2 = 0. Find the values required for W and R in order to establish a drain current of 160 µA and a voltage Vp of 0.8 V. VDp = 1.8 V o VD R

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Given a depletion-type MOSFET with IDSS = 6 mA and VP = -3 V, determine the drain current at VGS = -1, 0, 1, and 2 V. Compare the difference in current levels between -1 V and 0 V with the difference between 1 V and 2 V. In the positive VGS region, does the drain current increase at a significantly higher rate than for negative values? Does the ID curve become more and more vertical with increasing positive values of VGS? Is there a linear or a nonlinear relationship between ID and VGS? Explain.

Q25 In a N-Channel JFET if the voltage across the drain and source (VDDS) is increased then explain in detail with neat diagram the changes in drain current. Justify your answer. ii) The reverse gate voltage of JFET when changes from 3.5 V to 3.2 V, the drain current changes from 1.2 mA to 2.1 mA. Calculate the value of transconductance of the transistor.

Solve the related problems in this examples.

Problem 1. Suppose the body electrode of a MOSFET with a p-Si body is at ground potential, and the gate voltage, VG, is set appropriately to create an inversion channel between the source and drain electrodes. Which electrode, the Source or the Drain, will need a more positive potential if we wanted to move channel carriers from the Drain towards the Source (as opposed to the normal flow direction of Source to Drain)? As always required on your work, explain your answer.

4. For the circuit given below, determine the voltage (VBB) that just lets the transistor go into saturation. Assume the VCE is equal to 0.3V when the transistor goes into saturation. Assume current gain hfE = 200. The transistor is silicon type (i.e., VBE is 0.7V) + 10V (Vcc) VBB Rc32 k2 Ic 50 k2 SRB IB VBE

Kindly answer the following question (as soon as possible) #24