please calculate a and b and sketch for c ( only a,b, and c) 5. For the sample whose energy band diagram is shown in the Figure below:10.15 eVF850 μηa.Find the effective electric field for electrons.b. Find the effective electric field for holes.c.Sketch the carrier concentrations.d. Indicate the directions of each of the following:Hole diffusionHole diffusion currenti.11.111.Hole driftiv.Hole drift currentV.Electron diffusionvi. Electron diffusion currentvii.Electron driftviii.Electron drift currentix.Electric field for electronsx.Electric field for holes0.3 eVtEcEfEEv

a. To find the effective electric field for electrons, we need to consider the slope of the energy…

Answered: 5. For the sample whose energy band…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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At 305 °K temperature, the voltage equivalent of temperature of diode is ______________________V. Assume the Boltzmann's constant is 8.62*10-5 eV / K Answer:
8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: )with the guard ring. (7) without guard ring. 10 95% () 86 13%|
Consider the following circuit diagram. Using practical diode model solve the following items. i. What is the type of rectification in this circuit? ii. Calculate the total peak secondary voltage (Note that “RMS" value is given in the circuit) iii. Sketch the plot of time vs voltage over Load (RL) iv. Find the average voltage over Load. v. Find the maximum current passing over diodes. vi. Find the peak inverse voltage (PIV) over the diodes. vii. Find the minimum fuse current rating for the primary coil. 5:1 D DA 120 V rms D3 D2 RL=10kQ RL out ell lelll
In a semiconductor it is observed that 0.7 of the current is carried by holes and 0.3 by electrons. If the drift speed of the electrons is two times that of the holes, what is the ratio of electrons over holes?
(b) Determine the peak voltage of the Vs.TM (a) Determine the average voltage of Vo. 5 URM supply voltage, Vs, is a sinusoidal AC signal. The produced output, Vo, is a fluctuating DC signal with ripple peak-to-peak voltage of 1.58 V. Figure B.2 shows a circuit using two silicon diodes with knee voltage of 0.7 V. The UTM UTM S; TM 3 UTM E UTM2:2 DI UTM UTM 50 Hz &UTM UTM 8 UTM 5 UTM TM UTM 50 μ F RL UTM UTM UTM TOTM D, &UTM TM & UTM STM (b) Determine the peak voltage of the Vs. (a) Determine the average voltage of Vo. K UTM Figure B.2 UTM (c) Consider when UTM UTM & UTM waveform of Vo with complete labelling. Ci is removed from the circuit (i.e, open circuit). Draw the FUT O UTM UTM
The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e, the Fermi energy level Ef is constant) is shown in the figure. The valence band E, is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence band at the two edges of the bar is A. p-type Ef Ev z = 0 z = L If the charge of an electron is q, then the magnitude of the electric field developed inside this semiconductor bar is
5. A voltage source produces a "Triangle" wave and is connected to a series diode and resistor circuit as shown. D1 KH D V1 #1 V R1 R Using the nominal piecewise linear model for a diode, determine from the following possibilities the graph that best represents the voltage across the resistor? (Delete those that do not apply) (Blue curve VR, dashed curve V1). Then determine which graph best represents the voltage across the diode.
(a) Figure 1 shows a circuit that consists of two silicon diodes, D₁ and D2. Using ideal model approximation technique, determine the current cross through the diodes, D₁ and D₂ and the output voltage, Vo. Next, perform the same analysis using the Piecewise-Linear equivalent circuit for the diode with a forward resistance value, rav of 50. Finally, compare and discuss the results between ideal and Piecewise-Linear equivalent circuits. R₁ 1 D₁ +3V 5 ΚΩ 19 10 ΚΩ -3V Figure 1
Q. Calculate the hole and electron densities in a N-type germaniumsemiconductor at room temperature. The conductivity of semiconductor bar is 500 S/cm. The mobility of electrons and holes at room temperature for germanium is 3800 cm2/ Vs and 1800 cm2/ Vs respectively and ni= 2.5 × 1013/cm3.
Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.
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GLOBE all ll 285 B/s CA 40 6:54 TNT mec 2131 activ... / 4. For the series diode configuration below, employing the diode characteristics , determine the ff: a. Vpa and loa b. V, , (mA) 18- 16+ 14- 12+ E10 V 0.5 kn V, 0.5 0.8 VV) (a) (b) 5. Determine Vo, , loz for the parallel configuration + VR 0.33 k2 + 0.33 k R R E 10 V D Si Si V. EE 10 V 0.7 V3 0.7 V V.

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