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#5
5. Consider a dielectric mirror that is made up of quarter wave layers of GaAs with nH = 3.382 and AlAs with n = 2.912, at operating wavelength of around 1500nm. The GaAs-AIAs dielectric mirror is inside a vertical cavity surface emitting laser diode operating at 1.5μm. The substrate is GaAs with n3 = nsubstrate = 3.382. The light is incident on the mirror from another semiconductor that is GaAlAs with an index no = 3.4. Calculate reflect ith N=5 10. What would be the bandwidth?
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Transcribed Image Text:5. Consider a dielectric mirror that is made up of quarter wave layers of GaAs with nH = 3.382 and AlAs with n = 2.912, at operating wavelength of around 1500nm. The GaAs-AIAs dielectric mirror is inside a vertical cavity surface emitting laser diode operating at 1.5μm. The substrate is GaAs with n3 = nsubstrate = 3.382. The light is incident on the mirror from another semiconductor that is GaAlAs with an index no = 3.4. Calculate reflect ith N=5 10. What would be the bandwidth?
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