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4Ic (mA) 30 μΑ 25 μΑ 5 20 µA 15 μΑ 3 10 μΑ 2 5 µA Ig = 0 µA 5 10 15 20 VCE

4Ic (mA) 30 μΑ 25 μΑ 5 20 µA 15 μΑ 3 10 μΑ 2 5 µA Ig = 0 µA 5 10 15 20 VCE

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Please answer the question step by step and please care to explain the question in detailed with your own sentence and explain why you used that formula, calculations etc asap. Thanks in advance.

Ic (mA) 30 μΑ 25 µA 5 20 μΑ 4 15 μΑ 10 μΑ 2 5 µA 1 Ig = 0 µA 10 15 20 VCE Figure-2 A BJT characteristic curves is given in Figure 2. A collector feedback DC biasing network with single transistor having improved level of stability is requested from you for an amplifier network. NPN type silicon transistor is preferred for that design. a) Plot the BJT amplifier network by into account the explanations above and considering DC isolation conditions form other networks. Explain the aims and reasons in using of all the peripheral components handled on your network. b) What can be the possible level of Ic and VCE in saturation region using the total value of Rc and RE as 4.8 k. Calculate and draw load line using the characteristic curve for IB= 5 µA on figure by takink B= 100, find Q-point values as Ico and VCEQ c) Calculate RF, RE and Rc choosing Rc-3RE. Check the calculated dC bias values and point out that the transistor biasing network operates in in active region or not.
Transcribed Image Text:Ic (mA) 30 μΑ 25 µA 5 20 μΑ 4 15 μΑ 10 μΑ 2 5 µA 1 Ig = 0 µA 10 15 20 VCE Figure-2 A BJT characteristic curves is given in Figure 2. A collector feedback DC biasing network with single transistor having improved level of stability is requested from you for an amplifier network. NPN type silicon transistor is preferred for that design. a) Plot the BJT amplifier network by into account the explanations above and considering DC isolation conditions form other networks. Explain the aims and reasons in using of all the peripheral components handled on your network. b) What can be the possible level of Ic and VCE in saturation region using the total value of Rc and RE as 4.8 k. Calculate and draw load line using the characteristic curve for IB= 5 µA on figure by takink B= 100, find Q-point values as Ico and VCEQ c) Calculate RF, RE and Rc choosing Rc-3RE. Check the calculated dC bias values and point out that the transistor biasing network operates in in active region or not.
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