4. Verify Kirchhoff's junction rule by measuring current flows at the junction a. Write induvial values and sum them up to show conservation of charge. R1 R3 a R4 {I R2 I1 €1 b 13 €3 12 €2 Circuit 4

electrical Potential in volts Pont (x,y) is V= (4y) f(x, y) = eTan %3D Determin for the the direction of movemen t int for for max rate of decrease In electrical potential and what is that rate of decrease?

2) Solve the following values in figure 2.0. a) Total capacitance, Ct b) Total charge, Qt c) Individual charge of (a) C1 (b) C2 (c) C3 FIGURE 2.0 A 12 10V :C1 :C2 :C3 TuF 2uF 3uF B•

A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B