Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
4. The Silicon semiconductor (doped with 3 donor atoms per 6x10° si atoms) is subjected to a 300 degrees K at which the mobility of electrons is 2500 cm? Find the following v-s given that the atoms per unit volume is indicated in the table:

4. The Silicon semiconductor (doped with 3 donor atoms per 6x10° si atoms) is subjected to a 300 degrees K at which the mobility of electrons is 2500 cm? Find the following v-s given that the atoms per unit volume is indicated in the table:

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
10th Edition
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Russell E. Smith
Chapter12: Electronic Control Devices
Section: Chapter Questions
Problem 14RQ
See similar textbooks
icon
Related questions
Question
100%
4. The Silicon semiconductor (doped with 3 donor atoms per 6x10 Si atoms) is subjected to a 300 degrees K at which the mobility of electrons is 2500 cm? Find the following v-s given that the atoms per unit volume is indicated in the table: Drift Current in Semiconductors Property Ge Si Atomic number 32 14 Atomic weight 72.6 28.1 Density (gram/cm³) 5.32 2.33 Atoms per cm3 4.4x1022 5x1022 EGo (energy gap at 0 °K ) (eV) Eg (energy gap at 300 °K ) (eV) 0.785 1.21 0.72 1.1 ni (intrinsic carrier concentration) at 300° K (number Icm³) 2.5 x1013 1.5 x1010 2.3 x105 Intrinsic resistivity at 300° K (2- cm) un (electron mobility) (cm²/ V-sec) at 300° K 45 3800 1300 up (hole mobility) (cm²/ V-sec) at 300° K 1800 500 Dn (electron diffusion constant 99 34 at 300° K) (cm²/sec) Dp (hole diffusion constant at 300° K ) 47 13 (cm³/sec) A). Resistivity B). Conductivity C). If the semiconductor dimension is 10-cm. Determine the resistance.
Transcribed Image Text:4. The Silicon semiconductor (doped with 3 donor atoms per 6x10 Si atoms) is subjected to a 300 degrees K at which the mobility of electrons is 2500 cm? Find the following v-s given that the atoms per unit volume is indicated in the table: Drift Current in Semiconductors Property Ge Si Atomic number 32 14 Atomic weight 72.6 28.1 Density (gram/cm³) 5.32 2.33 Atoms per cm3 4.4x1022 5x1022 EGo (energy gap at 0 °K ) (eV) Eg (energy gap at 300 °K ) (eV) 0.785 1.21 0.72 1.1 ni (intrinsic carrier concentration) at 300° K (number Icm³) 2.5 x1013 1.5 x1010 2.3 x105 Intrinsic resistivity at 300° K (2- cm) un (electron mobility) (cm²/ V-sec) at 300° K 45 3800 1300 up (hole mobility) (cm²/ V-sec) at 300° K 1800 500 Dn (electron diffusion constant 99 34 at 300° K) (cm²/sec) Dp (hole diffusion constant at 300° K ) 47 13 (cm³/sec) A). Resistivity B). Conductivity C). If the semiconductor dimension is 10-cm. Determine the resistance.
Expert Solution
steps

Step by step

Solved in 2 steps with 2 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Knowledge Booster
Types of Semiconductor Material and Its Energy Band Analysis
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Electricity for Refrigeration, Heating, and Air C…
Electricity for Refrigeration, Heating, and Air C…
Mechanical Engineering
ISBN:
9781337399128
Author:
Russell E. Smith
Publisher:
Cengage Learning
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
SEE MORE TEXTBOOKS