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- R1=1kiloOHM, Voltage Source=1Vpk at 1kHz frequency D1 1 2 V1 ~) 1V R1 1kHz 1k2 0 0° a.) What is the state of the diode when the input is positive cycle? (Explain in 1 phrase) b.) What is the state of the diode when the input is negative cycle? (Explain in 1 phrase) c.) Plot the output waveform of the circuit3. Graphical Representation of the signal 1) Write the type of the voltage from simulation results: 2) Write the value of the voltage from simulation result: L....... -2 DDU 12ns SónG Trace Color Trace Name X Values CURSOR 1,2 V(R1:1,0) Y1 Y2 Y1 - Y2 5.0373m 0.000 5.0373m 249.983 0.000 249.983 Y1(Cursor1) - Y2(Cursor2) Y1-Y1(Cursor1) Y2 - Y2(Cursor2) Max Y Min Y Avg Y 249.983 0.000 0.000 249.983 0.000 124.991Question 2 (a) Analyze the complete voltage - current (V-I) characteristic of a diode. (b) Consider the filtered bridge rectifier circuit with a load in Figure 1. (i) Draw the voltage waveforms for Vim, Vrerij Vptsce) and Voat)- (ii) Calculate the ripple factor. (iii) Re-calculate the ripple factor if the filter capacitor in Figure 1 is decreased to 1000 µF and the load resistance changes to 220 2. Write your observation regarding these changes. 10:1 D3 D 240 V rms Vpipri) Output 50 Hz R 2200 μΕ D4 2.2 k2 All diodes are IN4001. Figure 1 elle
- Short answer. What happens to the resistance of a negative temperature coefficient material if its temperature increases? Use the editor to format your answer Short answer. What is the advantage of a semiconductor device if in the conduction of current there is no voltage drop across it? Use the editor to format your answer Short answer. Why a semiconductor diode is called a non-linear device? Use the editor to format your answer(02) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) What is the minimum value for RL needed to turn Zener diode ON?, And what is the maximum value for RL needed to turn Zener diode is ON? -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.Q1. Determine the class of mater ial based on relative comparison for each energy diagram. Energy Energy Energy Conduction bund Energs gap Conduction band Energy gap Conduction band Overlap Valence band Valence bund Valence band (b) Assignment1- (ENEL2104) Page 1 Q2. What are the major carriers in the depletion region? Explain.
- Please help. You are going to draw arrows that indicates the flow of the given 5 actions (a,b,c,d,e). You can draw arrows for all of them in the picture above, or make separate drawing for each letter. Please help me this is about CARRIER ACTION/FLOW OF CARRIERS in a semiconductor. It is also about Ferni Level.The datasheet shown below for a group of commercial Zener diodes, according to the datasheet the typical voltage and leakage current of the Zener diode with model number 1N4732A are: * Tolerance- S% FAIRCHILD SEMICONDUCTOR Datasheet 1N4728A - 1N4758A Zener Diodes D0041 Glass case Electrical Characteristics 1,-25°C untess otherwise noted Vz (V) @ Iz (Note 1) Max. Zener Impedance Leakage Current Test Current Device Zz@lz ZzK @ IZK (mA) IR (HA) VR (V) Min. Тур. Мах. Iz (mA) (오) Izk (2) 3.315 3.42 1N4728A 3.3 3.465 76 10 400 1 100 1 1N4729A 3.6 3,78 69 10 400 100 1N4730A 3.705 4.085 3.9 4.095 64 9 400 50 1N4731A 4.3 4.515 58 400 10 1N4732A 4.465 4.7 4.935 53 500 1 10 1 1N4733A 4.845 5.1 5.355 49 550 10 1 1N4734A 5.32 5.6 5.88 45 600 10 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 1N4736A 6,46 6.8 7.14 37 3.5 700 1 10 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 b. 1V and 10uA O c. 4.7V and 10uA a. 4.465V and 10UA O d. 4.7V and 53mAIf the potential barrier to carrier diffusion is increased (in a diode) by the applied voltage, the type of bias used is Blank 1 bias. Blank 1 Add your answer The physical process that is responsible for the interactions between atoms and molecules is called a/an Blank 1. Blank 1 Add your answer In an intrinsic semiconductor, when a conduction-band electron loses energy and falls back into a hole in the valence band, it is called a/an Blank 1. Blank 1 Add your answer
- Consider a n-type silicon sample. If a power supply is connected between two ends of the silicon sample with 5 volts of voltage, 5 milliampers of current flows through the sample. If Na=3x1014 cm-3, N3=0, Dn=10 cm2/sec, Dp=20 cm2/sec, kt/q=D0.025 volts, obtain mobilkity if the sample area is two times its length in magnitude. (q=1.6x10-19 C, T=300 °K, kT=0.025 Ev, n=1010 cm-3) O a. 0.75 O b. 12.2 O c. 10.42 O d. 0.0675 O e. 20.85 O f. 0.45 O g. 8.5 O h. 885FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…A conductor carries a current that is equivalent to a 5 A continuous current in one direction and a superimposed full-wave rectifier current in the opposite direction. What is the maximum value of the latter if the average conductor current is zero?