4. A BJT amplifier has the following component values as shown in the figure with a hoe = 20µS and B = 180. Solve for the AC parameters ZIT, Zor, ArT, and AVT using the r transistor model. The V; terminal is connected to a 2 mV sinusoidal source with a series source resistance of 7500 and the Vo terminal is connected to a 2kN load. Vcc = 20 V

4. A BJT amplifier has the following component values as shown in the figure with a hoe = 20µS and B = 180. Solve for the AC parameters ZIT, Zor, ArT, and AVT using the r transistor model. The V; terminal is connected to a 2 mV sinusoidal source with a series source resistance of 7500 and the Vo terminal is connected to a 2kN load. Vcc = 20 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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(a) For the given class A power amplifier, determine the following: i. Efficiency of the amplifier circuit for an input voltage that results in an AC base current of 15.44mApeak and DC collector- emitter voltage, VCEQ of 9.15 V. ii. Value of the collector resistor RC using standard resistance value. +20 V 1.2KOS HE+Vo B= 45 10uF (b) Draw the circuit of a Class C power amplifier and compare in detail its advantage and disadvantage from a class A power amplifier.
True or False? For good amplifier design, transistors are biased in the knee part of the IV-Curves. The most fundamental parameter in characterizing the small-signal linear operation of a transistor is the transconductance gm. When a resistance is connected in series with the source (or emitter), the Hybrid-Pi model is the most convenient to use. Discrete-circuit amplifiers predominantly employ MOSFETs while IC amplifiers predominantly uses BJTs. The basic gain cell of IC amplifiers is the CS (CE) amplifier with a current-source load. The MOS current mirror has a current transfer ratio of (W/L)1/(W/L)2. The internal capacitances of the MOSFET and the BJT cause the amplifier gain to rise at high frequencies. The internal MOSFET capacitances that must be considered when evaluating the frequency performance are the gate capacitances and the junction capacitances. Channel modulation causes Id to increase in the saturation mode. When Vgs=Vt, the channel charge beneath the gate is inverted.
Enclosed please find an amplifier circuit designed with a BJT transistor. VCC = 9Volt for the circuit. All capacity values are selected sufficiently large. BJT Transistor B = 100 Vbe(on) = 0.8V, VA=100V, Vt= 26mV Vce (sat) = 0.15Volt. Calculate “Vceq” and “Icq “ values at the operating point of the circuit. In what area does this BJT transistor work in? Draw the small signal equivalent circuit of the circuit. Calculate the AC small signal current earnings of the circuit (Ai = I out / I input). Note: Is the current passes over Rs source resistance and The IO current passes over RL source resistance. Please Calculate Rin input resistance?
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Figure 2 shows a typical BJT amplifier, with its parasitic capacitances displayed. The current gain of the transistor is B=150 and the voltage gain of the amplifier is Am =-125. The small signal resistances of the transistor are re =16 ohm and r0 = infinity, respectively. The values of resistors and capacitors in the figure are: R1 =80 kohm, R2 =20 Kohm, Rc = 2 Kohm, RE = 2 Kohm, Rs =50 W, RI=5 kohm, Cs=2 uF, Cc=2 uF, Ce =10 uF, Cbc =4 pF, Cbe = 10 pF, Cce =1 pF, Cwi = 4 pF, CWO = 9 pF, and Vcc = 20 V. a) Sketch a simplified circuit diagram of Figure 2 for high frequency analysis. b) Using the concept of "Miller effect capacitance", calculate the input and Output Miller effect capacitances of Figure 2, respectively. C) Determine the upper cut-off frequency of Figure 2 that is imposed by its input network only. d) Explain briefly the possible ways to increase the upper cut-off frequencv of this amplifier.
III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain power supply (VDD) = 3 volts. (a) Draw the load line over the l-V characteristics shown immediately below.. (b) What is the slope of the resistive load line? VDD =3 volts 6 mA 5 mA -+ R. 4 mA + 3 mA -t 2 mA 1 mA 3 V 4 V 5 V Vps
(a) Using the hybrid-pi model with early voltage effect, compute the small signal voltage gain, Av, input resistance and output resistance for the CE BJT amplifier shown below. Q1. Vcc = 12 V B=100 VBE(ON) = 0.7V V = 100V R = 93.7k2 * R=6 k2 Vo Rs = 0.5 k2 C B E R,= 6.3 k2 Figure Q1(a)
5) Design a Common source E-MOSFET amplifier and write the formula of voltage gain
Data sheet below shows design parameters for a Common Source FET Transistor amplifier.VDD = 12V , VD = 0.75 VDD , VG = 0.5 VDD , Cin = Cout = 5muF , K = 1mAV-2 , VTN = 1V , R2 = 10k and ID = 2mA Q. At DC condition,design the circuit by calculating values for VG,R1,RD,VGS,RS and gm of the FET amplifier (show all the calculated steps involved). Propose and draw the DC circuit from the calculated values.
In an emitter-biased transistor circuit, we have collector source voltage V CC = 15 V, collector resistance RC = 3.5 kOhm, emitter voltage V_E = 4.3 V and emitter current LE = 2.1 mA. If the current gain is 150, what is the difference in emitter-collector voltage V_CE when we calculate it including the gain factor vs when it is calculated by assuming collector current LC = LE? Select one: O a. 3.35 V O b. 3.40 V OC 0.05 V O dov
Sketch the circuit for a common-source amplifier such that Vgs = 2.4666 V and Id = 1.133mA. Calculate the vi/vo and voltage gain. Tech Parameters: Vtn = 1.3 V kp = 20.45 uA/V^2 W/L = 80
6b. The transistor consists of three terminals. The main reason for designing configurations is that it requires four terminals in order to provide the input and the output connections of the circuit for effective amplification. Now in your own words describe how Bipolar Transistors Transistor ( BJT ) various configurations are designed with relating diagrams. In your own estimation evalute which one is most widely used when looking at appreciable output for an amplifier?