Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- Plz answer correctly ....arrow_forwardUse Kirchhoff's law method Indicates the conduction status of the diode The result is the table of current and voltage values for each element Incorporates the diode conduction voltage if applicable 9) R1 200 Dzes; Rz 10, ojesi EI E2 E3arrow_forwardplease answer all partsarrow_forward
- Dopant density (cm-³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2, 10-4 10-3 10-¹ 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) FIGURE 2-8 Conversion between resistivity and dopant density of silicon at room temperature. (After [3].) N type 10-2 P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-3 of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 um long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?arrow_forwardPlease answer all subparts please answer in typing formatarrow_forwardCalculate the equivalent resistances Rin of the following circuits. (The resistance value of the diodes in the conduction will be 0, the resistance value of the diodes in the insulation will be taken as infinity. R1=10ohmarrow_forward
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