4) Consider a Schottky junction diode between Au and n-Si, doped with 10% donors/cm³. The cross-sectional area is 1 mm². a. Given the work function of Au as 5.1 eV, what is the theoretical barrier height from the metal to the semiconductor? b. Given that the experimental barrier height is about 0.8 eV, what is the reverse saturation current (use Equation 4.39 4th ed, Richardson-Dushman equation, Assume B- 110 A/(cm³K²)? e c. What is the current when there is a forward bias of 0.3 V across the diode? B = =

24 A 30-volt forward voltage is applied to a silicon diode in series with a load of 3 kf2. Draw the de load line. What is the slope of the line? Solution The value of voltage Vy across diode is given by V, V R, Since R and V are fixed values, this equation can by represented by a straight line on V- characteristics of diode; this is de load line. When Ip 0, maximum voltage across the diode V 30 V. This is point B(30, 0). 10 mA 30 V Fig. 2.25 Problem 2.4.

b. The hole mobility in a semiconductor is 300 temperature of 500 K. What is the cm²/(Vs) at a hole diffusion constant at the same temperature of 500 K?

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