3. Now we replace the resistor in the circuit of problem 1 with a diode-connected PMOS device as shown. M4 (5/1) D4 M6 D6 REF = 25μA D1 M1 (5/1) VDD = 5V V GSP + VGSN D5 M5 (5/1) D2 M2 (10/1) Vss=-5V D3 M3 (25/1) a. What W/L ratio is needed for M6 in order to set IREF = 25 µA? b. If M6 is implemented as a diode-connected nFET instead of pFET, what W/L ratio would be required? C. Which implementation, pFET or nFET would take up the most area, assuming W is fixed at 1μm?

3. Now we replace the resistor in the circuit of problem 1 with a diode-connected PMOS device as shown. M4 (5/1) D4 M6 D6 REF = 25μA D1 M1 (5/1) VDD = 5V V GSP + VGSN D5 M5 (5/1) D2 M2 (10/1) Vss=-5V D3 M3 (25/1) a. What W/L ratio is needed for M6 in order to set IREF = 25 µA? b. If M6 is implemented as a diode-connected nFET instead of pFET, what W/L ratio would be required? C. Which implementation, pFET or nFET would take up the most area, assuming W is fixed at 1μm?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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