3. n = 1.5 x 1010 cm for intrinsic silicon at room temperature. Assume E, = E, is in the middle of the band gap. As a result of doping the material with donors, Fermi energy is raised to 0.2 ev below the conduction band. Calculate the concentration of electrons in the conduction band and the concentration of holes in the valence band for this material.
3. n = 1.5 x 1010 cm for intrinsic silicon at room temperature. Assume E, = E, is in the middle of the band gap. As a result of doping the material with donors, Fermi energy is raised to 0.2 ev below the conduction band. Calculate the concentration of electrons in the conduction band and the concentration of holes in the valence band for this material.
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Transcribed Image Text:3. n; = 1.5 x 100 cm³ for intrinsic silicon at room temperature. Assume E, = E, is in the
middle of the band gap. As a result of doping the material with donors, Fermi energy is
raised to 0.2 ev below the conduction band. Calculate the concentration of electrons in
the conduction band and the concentration of holes in the valence band for this
material.
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