3) For a Ge (not Si) p-n junction with Na = 10ªcm~³ and Na = 1017cm¯³, the peak electric field in the junction at breakdown is 2 × 10$ V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.

Q3:- A bar of p-type silicon, has a cross-sectional area A = 10.6 em2 and a length L= 1.2x10 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and te) Impurity doping concentration? td) What is the resulting hole mobility