Answered: 3) Design a DC biasing network for a…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Can you solve the first three sub part a, b and c by explaining the your solution in detail, please. Thanks a lot.

3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained the characteristics given in Figure. It is requested that, the design is to be independent of temperature sensitivity or least level of dependency to temperature variations comparing to other biasing networks.

a) Draw the BJT network you prefer to design by into account the explanations above, and explain the reason for preferring this network

b) Explain the aims and reasons in using of all the peripheral components handled on your network

Note: Don’t forget using resistors and capacitors as peripheral elements whatever required for your each complete design in questions (i.e. input, output terminals etc.)

3) Design a DC biasing network for a npn type Si BJT device using the parameters obtained
the characteristics given in Figure. It is requested that, the design is to be independent of
temperature sensitivity or least level of dependency to temperature variations comparing to
other biasing networks.
4Ic (mA)
30 μΑ
6.
25 μΑ
5
20 μΑ
15 μΑ
3
10 μΑ
2
5 µA
1
Ig = 0 µA
10
15
20
VCE

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