Chemistry
Chemistry
10th Edition
ISBN: 9781305957404
Author: Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher: Cengage Learning
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3) A p-type <111> oriented silicon wafer (1015 cm-3) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x10" cm. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thic kness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is used for the gate oxide. iii) Explain the difference between mass-transport limited oxidation and reaction-rate limited oxidation. Under what oxide growth conditions would each of these be expected? 10 Dry oridation 1.0 Oidation time (h) Owd eN Wet Oxidation ↑ Onide thicknew umi
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Transcribed Image Text:3) A p-type <111> oriented silicon wafer (1015 cm-3) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x10" cm. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thic kness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is used for the gate oxide. iii) Explain the difference between mass-transport limited oxidation and reaction-rate limited oxidation. Under what oxide growth conditions would each of these be expected? 10 Dry oridation 1.0 Oidation time (h) Owd eN Wet Oxidation ↑ Onide thicknew umi
T(°C) 1100 1000 900 800 T(°C) 10T 700 1100 1000 900 800 700 H,0(760 torr) H20(760 torr) E-0.71 ev 10-1 EA-1.96 ev 10- 10-2 0g (760 torr) Og(760 tom) 10-E 10 E - 2.0 ev E -1.24 ev 104 0.7 0.8 0.9 1.0 10-3 1.1 0.7 0.8 0.9 1.0 1.1 1000/T(K) 1000/T(K) SiO2 SiO, B A (111) Si 10-2 900 C (111) Si Dry oxidation 10-3 B/A (um/min) 10-4 B (um?/min) 10-6 1017 1018 1018 1020 1021 Cg (cm-) (4/uam)
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Transcribed Image Text:T(°C) 1100 1000 900 800 T(°C) 10T 700 1100 1000 900 800 700 H,0(760 torr) H20(760 torr) E-0.71 ev 10-1 EA-1.96 ev 10- 10-2 0g (760 torr) Og(760 tom) 10-E 10 E - 2.0 ev E -1.24 ev 104 0.7 0.8 0.9 1.0 10-3 1.1 0.7 0.8 0.9 1.0 1.1 1000/T(K) 1000/T(K) SiO2 SiO, B A (111) Si 10-2 900 C (111) Si Dry oxidation 10-3 B/A (um/min) 10-4 B (um?/min) 10-6 1017 1018 1018 1020 1021 Cg (cm-) (4/uam)
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Step 1: Introduction
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Step 2: i) Growth of field oxides
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Step 3: ii) Diffusion and dry oxidation
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Step 4: Reasons for wet oxidation of field oxide and dry oxidation of expansion oxide
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Step 5: iii) Mass Transport Limited Vs. Limited Oxidation Reaction Rate
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