Homework Help is Here – Start Your Trial Now!
Science
Chemistry
3) A p-type <111> oriented silicon wafer (10¹5 cm ³) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x1020 cm³. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thickness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is urad for the gate oxida

3) A p-type <111> oriented silicon wafer (10¹5 cm ³) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x1020 cm³. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thickness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is urad for the gate oxida

Chemistry
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
See similar textbooks
icon
Related questions
Question
Please solve it complete
3) A p-type <111> oriented silicon wafer (1015 cm-3) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x10" cm. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thic kness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is used for the gate oxide. iii) Explain the difference between mass-transport limited oxidation and reaction-rate limited oxidation. Under what oxide growth conditions would each of these be expected? 10 Dry oridation 1.0 Oidation time (h) Owd eN Wet Oxidation ↑ Onide thicknew umi
Transcribed Image Text:3) A p-type <111> oriented silicon wafer (1015 cm-3) is placed in a wet oxidation system to grow a field oxide of 600 Å at 1000 °C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x10" cm. Next, a dry oxidation step is performed at 900 °C for 60 minutes. Find the thickness of the oxide over region A and the new thic kness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is used for the gate oxide. iii) Explain the difference between mass-transport limited oxidation and reaction-rate limited oxidation. Under what oxide growth conditions would each of these be expected? 10 Dry oridation 1.0 Oidation time (h) Owd eN Wet Oxidation ↑ Onide thicknew umi
T(°C) 1100 1000 900 800 T(°C) 10T 700 1100 1000 900 800 700 H,0(760 torr) H20(760 torr) E-0.71 ev 10-1 EA-1.96 ev 10- 10-2 0g (760 torr) Og(760 tom) 10-E 10 E - 2.0 ev E -1.24 ev 104 0.7 0.8 0.9 1.0 10-3 1.1 0.7 0.8 0.9 1.0 1.1 1000/T(K) 1000/T(K) SiO2 SiO, B A (111) Si 10-2 900 C (111) Si Dry oxidation 10-3 B/A (um/min) 10-4 B (um?/min) 10-6 1017 1018 1018 1020 1021 Cg (cm-) (4/uam)
Transcribed Image Text:T(°C) 1100 1000 900 800 T(°C) 10T 700 1100 1000 900 800 700 H,0(760 torr) H20(760 torr) E-0.71 ev 10-1 EA-1.96 ev 10- 10-2 0g (760 torr) Og(760 tom) 10-E 10 E - 2.0 ev E -1.24 ev 104 0.7 0.8 0.9 1.0 10-3 1.1 0.7 0.8 0.9 1.0 1.1 1000/T(K) 1000/T(K) SiO2 SiO, B A (111) Si 10-2 900 C (111) Si Dry oxidation 10-3 B/A (um/min) 10-4 B (um?/min) 10-6 1017 1018 1018 1020 1021 Cg (cm-) (4/uam)
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 6 steps with 1 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Knowledge Booster
Gravimetric Analysis
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, chemistry and related others by exploring similar questions and additional content below.
Recommended textbooks for you
Chemistry
Chemistry
Chemistry
ISBN:
9781305957404
Author:
Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:
Cengage Learning
Chemistry
Chemistry
Chemistry
ISBN:
9781259911156
Author:
Raymond Chang Dr., Jason Overby Professor
Publisher:
McGraw-Hill Education
Principles of Instrumental Analysis
Principles of Instrumental Analysis
Chemistry
ISBN:
9781305577213
Author:
Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Publisher:
Cengage Learning
Organic Chemistry
Organic Chemistry
Chemistry
ISBN:
9780078021558
Author:
Janice Gorzynski Smith Dr.
Publisher:
McGraw-Hill Education
Chemistry: Principles and Reactions
Chemistry: Principles and Reactions
Chemistry
ISBN:
9781305079373
Author:
William L. Masterton, Cecile N. Hurley
Publisher:
Cengage Learning
Elementary Principles of Chemical Processes, Bind…
Elementary Principles of Chemical Processes, Bind…
Chemistry
ISBN:
9781118431221
Author:
Richard M. Felder, Ronald W. Rousseau, Lisa G. Bullard
Publisher:
WILEY
SEE MORE TEXTBOOKS