2. The gm of the source follower transistor is 2mV/V and ro = 20 k2. The source resistance is 10ka and the output load resistance is 20kQ. The MOS transistor has Cs = 20fF, Ced = 10fF, gmb = 0.2 gm and the total output C = 15fF. Find AM, fr, fz, fp1, fp2 and fad8-

In the following circuit, the BJT Q1 operates in the active region. The amplification factor 8 = 100 and I, = 8 x 10-16 A. Determine the following; (a) Ic (b) IB (c) VCE (d) gm 0.8 V Rc 50 2 -Vcc=2.5 V

1.2 K2, RC = 1 KQ, B=50, find For the circuit given below, assume VCC=15 VBB=6.82V, RB = the value of RE to make the circuit operate in the active mode with VCE = 4V & IC= 5 mA. VB8 Vcc RB RC O vc O VE RE

B. Make a sketch of the channel region when VGS=VGS-OFF and make a sketch of the channel region when ID=IDSS and explain why each channel has this shape. C. Assuming that the measured values for the PF5102 were VGS-OFF= -1V and IDSs 10mA, design a common source amplifier for ID=4mA and VDS= 4V using a 12V supply and combination biasing without degeneration as you did in the laboratory. D. Find the input resistance, output resistance, and voltage amplification of your design using the hybrid-pi model and explain how you measured these parameters in the laboratory.

Q4: The parameters of the transistor shown are PF = 150, VBE = 0.7 V, and VCE(Sat) = 0.3 V. If Rc = 1.5 kQ. Is there a value of R3 so that the transistor operates in the saturation region. RB Rc Q₁ Vcc