2. Find the total resistance at terminal A-B 36 63 43 А 64 36 ww 36 45 36 10 76 63 86 26 B ww

An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm-3 cm³ and Na and N₂ = 5 X 1016 cm¯³ at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 3.88 X 105 V/cm Emax = 1.35 X 105 V/cm Emax 1.70 X 105 V/cm O Emax = 3.21 X 105 V/cm =

A thermal bimorph can be used as an actuator. In this problem, you will use the principles of “crayon engineering” to design a process and mask set that will produce a silicon‐based cantilever thermal bimorph with an integrated heater and an underlying hole structure as shown below. (Silicon‐based means that the final structure is made of silicon, plus oxide, nitride, and metal as needed. You don’t have to use a plain silicon wafer, but you can’t make the whole thing out of a completely different material like metal or SU8.) A description of the structure follows; a top view is shown in Figure 2. Where a dimension is not specified (like the lateral extent of the hole), you are free to choose a process that you think makes sense. This may turn out to be an economic trade‐off (for example, cost of processes vs. wasted space on the wafer). Cantilever composition: The cantilever includes a silicon structure, a metal layer on top of that (you can choose either Al or Au), an integrated…

Q5. For the following center tapped transformer, show the waveform across each half of the secondary winding and across Ri, when a 100 V peak sine wave is applied to the primarywinding. What is the PIV rating must the diode have? (Use constant voltage drop model for the Silicon diode) IN4001 Ry OV 10k) D IN4001