2. A different transistor has these parameters: VBE(ON) = 0.6 V, V CE(SAT) = 0.2 V, and ß = 100. The transistor is biased such that Vcc= 8 V, Rc = 2 kn, Rb = 20 k a. Calculate the maximum possible collector current, ic(MAX). b. Suppose ig = 0 such that ic = 0. What is the value of the collector-emitter voltage VCE? Rb 151 c. Suppose ip = 10 μA. What is the value of the collector-emitter voltage VCE? VBE Rc + VCE H Vcc

9.

For fixed bias circuit. V=+12V, RB = 240KQ, R=2.2K and B-50. For what value of ẞ does the transistor enter the .saturation region a. 75 b. 116 c. 20 d. 50

A Determine IC,IB,IE, VBE,VCE, VCB. Is the transistor in forward or reverse biasing? B=200 1001 Vec 10 V B/ Find RB, if Vin =5v. B=200. Voc +10 V Rc 1.0 kn VouT R VIN W

A base bias method is used in the following circuit. For Bpc - 300, the value of emitter current is: -Vc. +15 V Rc 1.8 k2 RB 560 k2 7.82 mA O 6.84 mA O 7.27 mA

For the given circuit, Vcc = 19 volts, Rg = 900 KN, Rc = 8 KN, Rɛ = 3 KN and ß = 100. Assume Transistor is Silicon, VBE=0.7 volts. Vc RC RB RE a. Compute for the base current Q-point, IBQ (in Amperes) [ b. Compute for the collector current Q-point, Ica (in Amperes) [1 c. Compute for the collector-to-emitter voltage, VCEQ (in Volts) [ ] d. Draw the Load Line, with details. [1 Note: Upload your answers as PDF file in the Moodle Final Exam submission link. 1. Base current Q-point in amperes is 2. Collector current Q-point in amperes is 3. Collector to Emitter Voltage Q-point in volts is

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Solove for the Equivalent Resistance at CE

Can you please help me with this homework problem?