18. A MOSFET differs from a JFET mainly because(a) of the power rating(b) the MOSFET has two gates(c) the JFET has a pn junction(d) MOSFETS do not have a physical channel19. A D-MOSFET operates in(a) the depletion mode only(b) the enhancement mode only(c) the ohmic region only(d) both the depletion and enhancement modes20. An n-channel D-MOSFET with a positive VGs is operating in(a) the depletion mode(b) the enhancement mode(c) cutoff(d) saturation21. A certain p-channel E-MOSFET has a VGS(th) = -2 V. If VGS = 0 V, the drain current is(a) 0 A(b) ID(on)(c) maximum(d) Ipss22. In an E-MOSFET, there is no drain current until VGs(a) reaches VGS(th)(b) is positive(c) is negative(d) equals 0 V23. All MOS devices are subject to damage from(a) excessive heat(b) electrostatic discharge(c) excessive voltage(d) all of these24. A certain D-MOSFET is biased at VGS = 0 V. Its datasheet specifies Ipss = 20 mA andVGSloff = -5 V. The value of the drain current(a) is 0 A(b) cannot be determined(c) is 20 mA25. An IGBT is generally used in(a) low-power applications(b) rf applications(c) high-voltage applications(d) low-current applications

18) C 19) A 20) B 21) A 22) A 23) B 24) C 25) C

18. A MOSFET differs from a JFET mainly because (a) of the power rating (b) the MOSFET has two gates (c) the JFET has a pn junction (d) MOSFETS do not have a physical channel 19. A D-MOSFET operates in (a) the depletion mode only (b) the enhancement mode only (c) the ohmic region only (d) both the depletion and enhancement modes 20. An n-channel D-MOSFET with a positive VGs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 21. A certain p-channel E-MOSFET has a VGsch) = -2 V. If VGS = 0 V, the drain current is (а) 0 А (b) ID(on) (c) maximum (d) Ipss 22. In an E-MOSFET, there is no drain current until VGS (a) reaches VGs(th) (b) is positive (c) is negative (d) equals 0 V 23. All MOS devices are subject to damage from (a) excessive heat (b) electrostatic discharge (c) excessive voltage (d) all of these 24. A certain D-MOSFET is biased at VGs 0 V. Its datasheet specifies Ipss = 20 mA and VGS(off) = -5 V. The value of the drain current (a) is 0 A (b) cannot be determined (c) is 20 mA 25. An IGBT is generally used in (a) low-power applications (b) rf applications (c) high-voltage applications (d) low-current applications

18. A MOSFET differs from a JFET mainly because (a) of the power rating (b) the MOSFET has two gates (c) the JFET has a pn junction (d) MOSFETS do not have a physical channel 19. A D-MOSFET operates in (a) the depletion mode only (b) the enhancement mode only (c) the ohmic region only (d) both the depletion and enhancement modes 20. An n-channel D-MOSFET with a positive VGs is operating in (a) the depletion mode (b) the enhancement mode (c) cutoff (d) saturation 21. A certain p-channel E-MOSFET has a VGsch) = -2 V. If VGS = 0 V, the drain current is (а) 0 А (b) ID(on) (c) maximum (d) Ipss 22. In an E-MOSFET, there is no drain current until VGS (a) reaches VGs(th) (b) is positive (c) is negative (d) equals 0 V 23. All MOS devices are subject to damage from (a) excessive heat (b) electrostatic discharge (c) excessive voltage (d) all of these 24. A certain D-MOSFET is biased at VGs 0 V. Its datasheet specifies Ipss = 20 mA and VGS(off) = -5 V. The value of the drain current (a) is 0 A (b) cannot be determined (c) is 20 mA 25. An IGBT is generally used in (a) low-power applications (b) rf applications (c) high-voltage applications (d) low-current applications

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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