Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- The value of po in a silicon semiconductor at T = 300K is 6.0 X 1015 cm-³. Determine EF - Ev EF-Ev= 0.183 eV EF - Ev = 0.179 eV EF - Ev = 0.071 eV EF - Ev = 0.193 eVarrow_forwardLight-emitting diodes (LEDs) are diodes made with III-V compound semiconductor materials such as aluminum gallium arsenide (AlGaAs), aluminum indium gallium phosphide (AllnGaP) or indium gallium nitride (InGaN), instead of silicon. The LEDs emit light when the device is operated under forward bias. LEDs of different colors have different turn-on voltages VD(on). For example: Color VD(on) Red ~ 1.6 V Yellow ~ 1.7 V (a) Model these five LEDs with a simplified piecewise linear model. (b) A rule of thumb is that it takes about 1 mA of current to "light" an LED while~ 10 mA is needed for it to appear bright. Use the piecewise linear model for the LEDs, for the over-voltage indicator circuit to the right, find the values of Vin which will cause D₁ or D₂ to light (i.e. when ID1 or ID2 exceeds 1 mA). Green ~ 1.8 V Blue ~ 2.8 V loks o mu Vin Red LED Red LED White ~ 3.8 V + lov 21 D₁ D2 -10V o t Vout 오arrow_forwardFind values of the intrinsic carrier concentration ni for silocon at 0Carrow_forward
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