Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Transcribed Image Text:1.2 The resistivities of the two sides of a step-graded Si junction arc 5 Q. cm
(p side) and 2.5 Q. cm (n side). Calculate the height of the potentiai
barrier Vo.
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- The step up chopper has R=20 ohm and out put voltage is 120V. The source voltage is 40V DC . The load inductance is 0.2mH. If the chopper frequency is 4KHZ find1- the duty cycle2- the average value of source current3- TON4- Imax5- Imin6-The average value of diode currentarrow_forwardDetermine which diodes are forward-biased and which are reverse-biased in the configurations.. Assuming a 0.7-V drop across each forward-biased diode, determine the output voltage.arrow_forwardQuestion 1: In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The diodes are Silicon with VD = 0.7V. a. Sketch the output without a Capacitor. b. Determine Voc without a Capacitor. c. Sketch Vs (at the Secondary). d. Determine Voc with a Capacitor of 10 uF across RL. e. Determine the RMS Value of Vp (at the Primary). f. PIV (Peak Inverse Voltage). 10:1 Output C. 22 k1 All diodes are IN4001. | 00000arrow_forward
- Determine the voltage across the diode in the figure below, using the complete diode model with: r'd = 10-? and r'R = 100-M? a. The value of the forward current. (in Amperes) b. The value of the forward voltage. c. The value of the voltage across the diode.arrow_forwardFor the given circuit, assume the diode D1 and D2 are the ideal diodes. The average value of the voltage Vab (in volts) across the terminal A and B isarrow_forwardThe current through the diode in the circuit given in the Figure below when Vy = 0.7 V is? ww 8092 12V Select one a. 24.26 mA b. 13.09 mA c. 58.23 mA d. 40.13 mA 40-52 ww 3092 IDarrow_forward
- Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?arrow_forwardConsider a junction diode has dc biased current at operating point ID=0.8 mA. A sinusoidal voltage is superimposed on the VD such that the peak-to-peak sinusoidal current id(t) = 0.05ID. Find the value of the applied peak-to-peak sinusoidal voltage vd(t).arrow_forward5V 3000 1000 . 2m 1 Si 4000 500 12V The circuit shown in Figure 1 contains a Si diode with a diode resistance on 1000. Use the piecewise linear model to solve the circuit. • How many nodes are in the circuit? • Determine the Thevenin voltage across the diode. Replace the diode with the appropriate model and then solve the circuit to determine the power dissipated by each resistor and the diode.arrow_forward
- find the diode voltage and diode current with solution and explanation.arrow_forwardA simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3arrow_forwardPlease respond to question in attached image. Please.arrow_forward
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