1.) What is the formula of resistance in forward conduction region of 4-layer diode? note: please give sample problem with solutions
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1.) What is the formula of resistance in forward conduction region of 4-layer diode?
note: please give sample problem with solutions
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- Question 1) Briefly explain the temperature dependence of conductivity of a p-type semiconductor.Determine whether each silicon diode in Figure below is forward-biased or reverse- biased. 100 V 10 km) www www 102 SV 10 V th (A) 10 k ww 20 V (B) KI * (C) www 560Q2-Find diode voltage for diode with given specifications (where Is=0.1fA, ID =300x10- 6A, n=1, at room temerature) * 1 Add file Q3-Find the radius of the Hydrogenatom in its most stable state (n = 1).m3 9.1 x 10-31 kg e= 1.6 x 10-19 C * 1 Add file
- diodes are on or off? explain why?What is the difference between an ordinary p-n junction diode and a zener diode?Question 3 Not yet With the given circuit below, if the input voltage is 20 volts peak-to-peak and the diode is a answered silicon diode, how much is the capacitor voltage in volts? (answer with values only) Marked out of 1.00 P Flag question RL Answer:
- نقطة واحدة Using the ideal diode -3 model of a silicon diode and taking E=10 V and R=1k, what is the value of diode current * ?at operating pointwww THE If you have a battery voltage source of 10V, R = 1k0, and the diode is made from silicon. Using simplified model approach, what is the voltage accross the resistor? 0.3V 4.4V 0.7V 9.3V2.) Is the total concentration of current carriers (free electrons and holes) in a semicon- ductor equal to the concentration of valence electrons? 3.) There are two types of current carriers in semiconductors (free electrons and holes) and only one type in metals. Yet, metals are much better conductors of electric current. Is this because the currents of electrons and holes oppose each other?
- A silicon diode is operated in an environment whose temperature is ten times its ambient temperature. Its forward breakover voltage will a. not change at all b. be slightly greater than 0.7 V c. be less than 0.7 V d. be greater by ten timeschoose True or False for the following1. Determine Vrout for the circuit in below and draw V outs assume the diode is the silicon type. R 10 kn +10 V- RL 100 kl V ov- IN914 -10 V-----