1. The transistor datasheet says VBE(ON) = 0.7 V, V CE(SAT) = 0.1 V, and ß = 200. The transistor is biased such that Vcc = 12 V, Rc = 3 ks, Rb = 25 kn a. If VCE = 0.1 V, what mode is the transistor operating in: cutoff, active, saturation? b. If ic = 0 A, what mode is the transistor operating in: cutoff, active, saturation? c. If VCE = 4 V, what mode is the transistor operating in: cutoff, active, saturation? d. If VCE = 12 V, what mode is the transistor operating in: cutoff, active, saturation? Rb ≤1.50 id BE Rc + VCE AH", Vcc

Determine the collector current in mA and determine what mode is the transistor for circuit below

Assume VRE 0.7 V and B-50 for the transistor in the circuit shown in the figure. For VCE = 2 V, the value of Rg is RB m B +12 V www Rc- 5 k C E VCE

The transistor shown in the crout below has a oument gain of p-100. You may assume the voltage between the base and the emer is 0.7V Calculate the collector voltage V 1820 ΚΩ b 3.5k Vc=? 20 9V

Vec +12V Re 1kS2 Re 470k2 BC107 Vc Ve Figure 3: Practical Fixed Bias Transistor Circuit 2. Measure the DC voltages Vc and VB using digital multi-meters. Determine the quiescent base current, collector current, and collector- emitter voltage.

For the circuit shown below, assume that ß = 240, Va = 120V and VT = .025V. a) Determine the small signal parameters for the transistor. Show your work! b) Draw the small signal model Vin www 408K 80K 12V m 35K 2K 30K 0.4mA VoQ = 5V

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Solve the collector-emitter voltage (VCE) of Figure 612. vc 8V R1 3.3ka Beta = 110 VEE R2 -12V 3.9ka Figure 612 1.48V O -0.7V O - 0.86V O 0.7V

3. Design a four-resistor BJT bias circuit, similar to the one shown in Figure 2, such that V3 = 4 V and Ic = 1 mA. Assume VBE (on) = 0.7 V and B-150 for the transistor. 12V R1 R2 10k RC 5.6k Q2N2222 RE Figure 2 Note: Use PN2222A in Multisim

Determine thel 1.V B, c and V for the transistor circuit in Figure. Rc 430 Q Rg Vcc A) Poc = 50 24 V 4.7 ko VBB 2 V