1. Given that the effective masses of electron and holes in gallium arsenide, calculate the position of the intrinsic Fermi energy level in units of eV with respect to the centre of the band gap at T = 300 K. a. 0.0452 b. 0.4056 c. 0.0920 d. 0.0380

A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2*10 ^15 cm -3 and with boron atoms to a concentration of 1.2*10 ^15 cm -3 . (a) Is the material n type or p type? (b) Determine n0 and p0 . (c) Additional boron atoms are to be added such that the hole concentration is 4*10 15 cm -3 . What concentration of boron atoms must be added and what is the new value of n0?     Please answer in typing format

A diode with n =1.6 conducts 45 mA at 0.75V at room temperature. Find the saturation current Is at room temperature (using the exponential model).

models Diodes-Piece-wise Problem #1 In the circuit shown below, the voltage source Vin is given by the sketch. Assuming an ideal diode, sketch the waveform resulting at Vout. Use the axis at the bottom to help you sketch the voltage output. 10Ω Vin +7V -7V + Vin Vin AA 1 3 4 5 1 2 D 3 5 V 4 + Vout 5 6 ➡t (ms) +++t (ms) 6

Assume that the mobility of electrons in silicon at T = 300 K is un 1300 cm²/V-s. Also assume that the mobility is mainly limited by lattice scattering. Determine the electron mobility(cm²/V-s) at T = 400 K. 844 484 864 854

Calculate the thermal-equilibrium hole concentration (cm-³) in Silicon at T=375 k. Assume the Fermi energy is 0.25 eV above the valence band energy. The value of N,=1.04x1019 cm-3 at T=300K. 6.15x10^10 3.33x10^15 6.13x10^15 O 6.15x10^16 O

Using the image below, explain what is happening within a semiconductor solid. Include the following terms in your explanation: photoelectric effect, • photon energy, and • valence and conductor bands. Image to dissect -10-22 eV Conduction band Band gap p alence band "Bands" are composed of closely spaced orbitals a Interatomic distance Energy

Show all the steps in detail and explain your working

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Question 1: In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The diodes are Silicon with VD = 0.7V. a. Sketch the output without a Capacitor. b. Determine Voc without a Capacitor. c. Sketch Vs (at the Secondary). d. Determine Voc with a Capacitor of 10 uF across RL. e. Determine the RMS Value of Vp (at the Primary). f. PIV (Peak Inverse Voltage). 10:1 Output C. 22 k1 All diodes are IN4001. | 00000