1. Each E-MOSFET in the following figure has a Vast of +10 V or -10 V, depending on whether it is an n-channel or a p-channel device. Determine whether each MOSFET is on or off. www 4.7 ΜΩ wa 10 ΜΩ +10 V 10 ΚΩ W (b) 10 ΜΩ 1.0 ΜΩ -25 V TTT W 4.7 k

Q: Figure 2 (for numbers 10 to 14). Vcc= 6V, RB =10k, RC=1k, B(beta)=100, hie=1k. Vcc O Vo A V₁O Zo'…

A: Given data Vcc=6V Rb=10k Rc=1k Beta=100

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A: Given:a circuit,when , the diode is off. when , the diode is on. Find:iD1, iD2, iD3 and v0.

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Q: round and er?

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Q: Ri=502 www www. lov VD (Volt) In the circuit below, find the current through the diodes R₂=55 ID…

A:

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A: Need to find gate bias voltage for the given conditions

Q: V1 -12V till $1 Key - A R3 www 24kQ R2 2400 Q1 2N3904 D1 1N4739A Vz=9 LED1 Q2 2N3904 R1 33002

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Q: Solve the emitter voltage of a voltage-divider bias circuit with Vcc=9V, R1=560k ohms, R2=560k ohms,…

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Q: The value of drain to source voltage at wl drain current is constant is usually referre as

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Q: the major portion of the majority charge carrier supplion by the emitter is called. collector others…

A: The solution is given below

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A: Given Data: Required Data:We need to find time "t" when the transistor enters saturation region.

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A: In this question we will find base , emitter and collector currents...

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A: In this question we need to find the transconductance .

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A:

Q: From the figure shown, when S1 is at 1 (toggle at up position) the following statement is not…

A: The given circuit is as shown below,

Q: A JFET with IDSS= 7.64 mA and VGSoff=-5V. The drain current when VGS=-3.19 V is

A: We need to find out the current for given voltage

Q: What is the value of Vgs, when Id is .10 ?constant reference voltage Vdd =12V @

A: For a circuit, The reference voltage is 12V. and The drain current is constant.

Q: Which of the following is a type of Metal Oxide Semiconductor Field Effect Transistor: P channel…

A:

Q: Determine the forward voltage and forward current for the diode for each diode models. Also, find…

A: The circuit diagram is shown below,

Q: A fixed bias n-channel JFET with Vdd= 12V, Rd= 1.2k ohms. Idss=12mA and Vp=-4V. Determine Id. O a.…

A: It is given that: VDD=12 VRD=1.2KΩ=1.2×103 ΩIDSS=12 mA=12×10-3 AVp=-4 V

Q: According to the anode the SUS thyristor is turn on for a Othe change of cathode - gate voltage %3D…

A: In this question we will write about SUS thyristor trun on process....

Q: * Holes in an n-type semiconductor minority carriers that are thermally produced majority carriers…

A: Holes and electrons are charge carriers in semi conductor devices N type and p type semiconductors…

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A: Given  When the pn junction is forward bais

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Q: an SCR is a a-four layer four junction device,3 terminal device b-four layer two junction device,2…

A: Tbe explanation is as follows.

Q: 4. Determine Vo. 5kN 2kΩ (b) 4k2 10kN Vio

A: In this question we will find Vo.. Note : as per our guidelines , I will answer 1st…

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A:

Q: VCE at B-80 of the silicon transistor shown in the figure below is equal to 150KSL §2KZ VCE 6.58 V

A: The current through 2k ohms resistor is IC+IB. Apply KVL to the output loop.…

Q: Which of the following is a type of Metal Oxide Semiconductor Field Effect Transistor: O N channel…

A: We need to select correct option.

Q: P By using mathematical approach fin! @VGS O ID © VDS For the figure 16 V 2k- Vi 2 M2 VP= -8 V

A:

Q: The diode is considered shorted when both anode and cathode has     a) Low resistance b) High…

A: according to question we need to dicuss about diode anode and cathod condition.

Q: In n-channel JFET, at pinch off voltage, the drain current is

A:

Q: Which of the following is a type of Metal Oxide Semiconductor Field Effect Transistor:

A: P Channel E-MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor   Hence OPTION A…

Q: A JFET has a specified pinch-off voltage of 5V. When VGs=0, what is Vos at the point where drain…

A: In this question We need to choose the correct option We know Drain current ID = IDSS (1-VGS /Vp )2…

Q: The following figure represents the energy band alignment of Conduction Band (CB) - Valence Band…

A: The solution is provided in the following section:

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.