1. An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A “Photon" is used as the logic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. Obtain a manufacturer's datasheet for the 2N7002 transistor. a. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? b. What is the range for the threshold voltage, Ves-Th? If the LED inside the opto-coupler has a VF of 1.2V @ 5mA, calculate a suitable value for Rin1. C. d. If the BJT inside the opto-coupler is in saturation (assume VCE-Sat = 0.0V), what is Ves for the 2N7002? e. Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? YDD

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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1.
An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A "Photon" is used as the
logic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V.
Obtain a manufacturer's datasheet for the 2N7002 transistor.
a.
Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002?
b.
What is the range for the threshold voltage, Ves-Th?
с.
If the LED inside the opto-coupler has a VE of 1.2V @ 5mA, calculate a suitable value for Rin1.
d.
If the BJT inside the opto-coupler is in saturation (assume VCE-Sat = 0.0V), what is Ves for the 2N7002?
е.
Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage?
VDD
5V
To Logic Controller:
Logical-0 = 0.ov
Logical-1 = 3.3V
D1
Rin1
Opto-Coupler
1N4001G
Q1
Vf
R2
10ka
2N7002
Transcribed Image Text:1. An opto-coupler is used to drive an NMOS transistor that in turn controls a DC motor. A "Photon" is used as the logic controller and has a logical-1 output voltage of approximately 3.3V and a logical-0 output of approximately 0V. Obtain a manufacturer's datasheet for the 2N7002 transistor. a. Based on the manufacturer's specifications, what is the maximum Ips and Vpss for the 2N7002? b. What is the range for the threshold voltage, Ves-Th? с. If the LED inside the opto-coupler has a VE of 1.2V @ 5mA, calculate a suitable value for Rin1. d. If the BJT inside the opto-coupler is in saturation (assume VCE-Sat = 0.0V), what is Ves for the 2N7002? е. Why would an opto-coupler be used here instead of driving the 2N7002 transistor directly with the logic voltage? VDD 5V To Logic Controller: Logical-0 = 0.ov Logical-1 = 3.3V D1 Rin1 Opto-Coupler 1N4001G Q1 Vf R2 10ka 2N7002
Value
Symbol
Parameter
Unit
2N7000
2N7002
NDS7002A
Voss
VoOR
Vass
Drain-to-Source Voltage
60
V
Symbol
On Characteristics
Vasth) Gate Threshold Voltage
Parameter
Conditions
Туре
Min.
Туp.
Мах.
Unit
Drain-Gate Voltage (Ros s1 MO)
Gate-Source Voltage - Continuous
Gate-Source Voltage - Non Repetitive (tp < 50 uS)
60
V
120
V
Vos = Vos. 'o =1 mA
2N7000
0.8
2.1
3
V
140
2N7002
NDS7002A
260
1500
300
Maximum Drain Current - Continuous
200
115
Vos = Vas. Io = 250 LA
2.1
2.5
1
Maximum Drain Current - Pused
Maximum Power Dissipation Derated above 25°C
500
800
Ros(ON) Static Drain-Source
On-Resistance
Vas = 10 V,
o= 500 mA
Vas = 10 V
lo = 500 mA, Tc = 125°C
Vas = 4.5 V, lo = 75 mA
Vas- 10 V
D= 500 mA
Vas = 10 V
lo = 500 mA, Tc = 100°C
Vas = 5 V.
o = 50 mA
Vas = 5 V,
ID = 50 mA, Tc = 100°C
Vas = 10 V
o- 500 mA
Ves- 10 V,
Io 500 mA, Tc= 125°C
VGs = 5 V
o = 50 mA
Vas =5 V,
lo = 50 mA, Tc = 125°C
2N7000
400
3.2
Po
200
mw
1.2
1.6
2.4
mwC
9
TJ TSTG Operating and Storage Temperature Range
TL
-55 to 150
-65 to 150
°C
1.9
Maximum Lead Temperature for Soldering Purposes,
1/16-inch from Case for 10O Seconds
300
°C
1.8
5.3
2N7002
1.2
7.5
Value
Symbol
Parameter
Unit
1.7
13.5
2N7000
2N7002
NDS7002A
ROJA
Thermal Resistance, Junction to Ambient
312.5
625
417
1.7
7.5
Electrical Characteristics
2.4
13.5
Values are at Tc = 25°C unless otherwise noted.
NDS7002A
1.2
Symbol
Off Characteristics
Parameter
Conditions
Туре
Min.
Тур.
Маx.
Unit
2
3.5
Drain-Source Breakdown
VGs =0V, Ip = 10 uA
BVoss voltage
loss
%3D
All
60
1.7
3
Zero Gate Voltage Drain
Current
Vos = 48 V, Vas =Ov 2N700o0
Vos = 48 V, Ves = 0V,
Tc- 125°C
Vos - 60 V, Vas Ov 2N7002
Vos = 60 V, Vas = OV. NDS7002A
Tc- 125°C
VGs = 15 V, Vos -Ov 2N7000
1
LA
2.8
5
2N7000
Vos(ON) Drain-Source On-Voltage Vas = 10 V,
D = 500 mA
Vas = 4.5 V,
ID = 75 mA
Vos = 10 V,
Io- 500 mA
Vas = 5.0 V,
lo = 50 mA
VGs = 10 V.
o- 500 mA
VGs = 5.0 V,
Io = 50 mA
Vas = 4.5 V,
Vos = 10 V
Vas = 10 V
Vos 22 Vos(on)
Ves = 10 V,
Vos 2 2 Voscon)
Vos = 10 V
ID= 200 mA
Vosz 2Vos(ON)-
o= 200 mÁ
Vos 2Vos(ON)
Io= 200 mA
V
1
LA
0.6
2.5
0.5
mA
0.14
0.4
lassF
Gate - Body Leakage,
Forward
2N7002
10
NA
0.6
3.75
VGs = 20 V, Vos = 0v 2N7002
NDS7002A
100
nA
0.09
1.5
Gate - Body Leakage
Reverse
VGs =-15 V, Vos =ov 2N700O0
NDS7002A
IGSSR
0.6
1
-10
nA
VGs = -20 V, Vos =Ov 2N7002
NDS7002A
0.09
0.15
-100
nA
ID(ON)
On-State Drain Current
2N7000
mA
75
600
Symbol
Parameter
Conditions
Туре
Min.
Туp.
Мах.
Unit
2N7002
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
500
2700
Ciss
Coss
Crss
Vos = 25 V, VGs "OV,
r= 1.0 MHz
All
20
50
pF
All
11
25
NDS7002A
2700
500
All
4
Forward
2N7000
ms
100
320
VDD- 15 V, RL- 25 2
'o = 500 mA
Vas= 10 V, RGEN = 250
VDD = 30 V, RL- 150 2 2N7002
Ip = 200 mA, Vas= 10 V, NDS7002A
RGEN = 25 N
VDD= 15 V, RL = 25 0
lo-500 mA, Vas 10 V,
RGEN = 25 N
Vop = 30 V, RL = 150 2N7002
D= 200 mA, VGs" 10 V, NDS7002A
RGEN = 25 2
Transconductance
ton
2N7000
ns
10
2N7002
80
320
NDS7002A
20
80
320
tom
Turn-Off Time
2N7000
ns
10
20
Drain-Source Diode Characteristics and Maximum Ratings
2N7002
NDS7002A
2N7002
NOS7002A
Is
Maximum Continuous Drain-Source Diode Forward
115
Current
280
ISM
Maximum Pulsed Drain-Source Diode Forward
0.8
A
Current
Drain-Source Diode
Forward Voltage
1.5
VGs = 0V
Is 115 mA(1)
Vas - OV,
Is = 400 mA(1)
VsD
2N7002
0.88
1.5
NDS7002A
0.88
1.2
Note:
1. Pulse test : Pulse Width s 300 us. Duty Cycel s 2 %.
Transcribed Image Text:Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A Voss VoOR Vass Drain-to-Source Voltage 60 V Symbol On Characteristics Vasth) Gate Threshold Voltage Parameter Conditions Туре Min. Туp. Мах. Unit Drain-Gate Voltage (Ros s1 MO) Gate-Source Voltage - Continuous Gate-Source Voltage - Non Repetitive (tp < 50 uS) 60 V 120 V Vos = Vos. 'o =1 mA 2N7000 0.8 2.1 3 V 140 2N7002 NDS7002A 260 1500 300 Maximum Drain Current - Continuous 200 115 Vos = Vas. Io = 250 LA 2.1 2.5 1 Maximum Drain Current - Pused Maximum Power Dissipation Derated above 25°C 500 800 Ros(ON) Static Drain-Source On-Resistance Vas = 10 V, o= 500 mA Vas = 10 V lo = 500 mA, Tc = 125°C Vas = 4.5 V, lo = 75 mA Vas- 10 V D= 500 mA Vas = 10 V lo = 500 mA, Tc = 100°C Vas = 5 V. o = 50 mA Vas = 5 V, ID = 50 mA, Tc = 100°C Vas = 10 V o- 500 mA Ves- 10 V, Io 500 mA, Tc= 125°C VGs = 5 V o = 50 mA Vas =5 V, lo = 50 mA, Tc = 125°C 2N7000 400 3.2 Po 200 mw 1.2 1.6 2.4 mwC 9 TJ TSTG Operating and Storage Temperature Range TL -55 to 150 -65 to 150 °C 1.9 Maximum Lead Temperature for Soldering Purposes, 1/16-inch from Case for 10O Seconds 300 °C 1.8 5.3 2N7002 1.2 7.5 Value Symbol Parameter Unit 1.7 13.5 2N7000 2N7002 NDS7002A ROJA Thermal Resistance, Junction to Ambient 312.5 625 417 1.7 7.5 Electrical Characteristics 2.4 13.5 Values are at Tc = 25°C unless otherwise noted. NDS7002A 1.2 Symbol Off Characteristics Parameter Conditions Туре Min. Тур. Маx. Unit 2 3.5 Drain-Source Breakdown VGs =0V, Ip = 10 uA BVoss voltage loss %3D All 60 1.7 3 Zero Gate Voltage Drain Current Vos = 48 V, Vas =Ov 2N700o0 Vos = 48 V, Ves = 0V, Tc- 125°C Vos - 60 V, Vas Ov 2N7002 Vos = 60 V, Vas = OV. NDS7002A Tc- 125°C VGs = 15 V, Vos -Ov 2N7000 1 LA 2.8 5 2N7000 Vos(ON) Drain-Source On-Voltage Vas = 10 V, D = 500 mA Vas = 4.5 V, ID = 75 mA Vos = 10 V, Io- 500 mA Vas = 5.0 V, lo = 50 mA VGs = 10 V. o- 500 mA VGs = 5.0 V, Io = 50 mA Vas = 4.5 V, Vos = 10 V Vas = 10 V Vos 22 Vos(on) Ves = 10 V, Vos 2 2 Voscon) Vos = 10 V ID= 200 mA Vosz 2Vos(ON)- o= 200 mÁ Vos 2Vos(ON) Io= 200 mA V 1 LA 0.6 2.5 0.5 mA 0.14 0.4 lassF Gate - Body Leakage, Forward 2N7002 10 NA 0.6 3.75 VGs = 20 V, Vos = 0v 2N7002 NDS7002A 100 nA 0.09 1.5 Gate - Body Leakage Reverse VGs =-15 V, Vos =ov 2N700O0 NDS7002A IGSSR 0.6 1 -10 nA VGs = -20 V, Vos =Ov 2N7002 NDS7002A 0.09 0.15 -100 nA ID(ON) On-State Drain Current 2N7000 mA 75 600 Symbol Parameter Conditions Туре Min. Туp. Мах. Unit 2N7002 Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time 500 2700 Ciss Coss Crss Vos = 25 V, VGs "OV, r= 1.0 MHz All 20 50 pF All 11 25 NDS7002A 2700 500 All 4 Forward 2N7000 ms 100 320 VDD- 15 V, RL- 25 2 'o = 500 mA Vas= 10 V, RGEN = 250 VDD = 30 V, RL- 150 2 2N7002 Ip = 200 mA, Vas= 10 V, NDS7002A RGEN = 25 N VDD= 15 V, RL = 25 0 lo-500 mA, Vas 10 V, RGEN = 25 N Vop = 30 V, RL = 150 2N7002 D= 200 mA, VGs" 10 V, NDS7002A RGEN = 25 2 Transconductance ton 2N7000 ns 10 2N7002 80 320 NDS7002A 20 80 320 tom Turn-Off Time 2N7000 ns 10 20 Drain-Source Diode Characteristics and Maximum Ratings 2N7002 NDS7002A 2N7002 NOS7002A Is Maximum Continuous Drain-Source Diode Forward 115 Current 280 ISM Maximum Pulsed Drain-Source Diode Forward 0.8 A Current Drain-Source Diode Forward Voltage 1.5 VGs = 0V Is 115 mA(1) Vas - OV, Is = 400 mA(1) VsD 2N7002 0.88 1.5 NDS7002A 0.88 1.2 Note: 1. Pulse test : Pulse Width s 300 us. Duty Cycel s 2 %.
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