Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Transcribed Image Text:1. An NTC thermistor has a B value of 3000K. What is its temperature coefficient of
resistance at 35C?
![Element
III-V
IV-IV
II-VI
Material
C (diamond)
Ge
Si
Sn (gray)
GaAs
InAs
InSb
GaP
GaN
InN
InP
x-Sic
ZnO n-type
Cd Se
ZnS
PbS
IV-VI
"Longitudinal effective mass.
Transverse effective mass.
Light-hole effective mass.
"Heavy-hole effective mass.
Transition
I
I
PARALDDD
I
I
D
D
D
I
Gap energy
E₂[eV]
0K 300 K
5.48 5.47
0.74
0.66
1.17
0.09
1.52
0.42
0.23
2.34
3.50
1.42
3.03
3.42
1.85
3.84
0.28
1.12
Room-temp.
conductivity
0.17
2.26
3.36
0.7
1.35
2.99
3.35
1.70
3.68
0.41
22-m
10-12
2.2
9 x 10-4
0.08
1.42
0.36 10*
10
10-6
Transitions: D = direct
I = indirect
Mobility of
electrons
[m²
He
0.18
0.39
0.15
0.14
0.85
3.30
8.00
0.01
0.04
0.46
0.04
0.02
0.08
0.02
0.06
Mobility of
holes
m²
0.12
0.19
0.045
0.12
0.04
0.046
0.125
0.007
0.01
0.015
0.005
0.018
0.0005
0.07
Work function
(photoelectric)
o [cv]
4.8
4.6
3.6
4.9
5.3
Effective mass
ratio at 4 K
m²
mo
0.2
1.64*
0.08
0.98*
0.19b
0.067
0.023
0.014
0.82
0.19
m
mo
0.25
0.04€
0.28
0.16
0.49d
0.3⁰
0.082
0.40
0.40
0.60
0.60
0.077
0.60
0.27
0.13 0.45
0.40
0.25
0.64
1.00
0.25](https://content.bartleby.com/qna-images/question/f0f28741-3499-4bb8-83cd-3a863148846e/5c64a11f-c836-4b21-bb2a-0ec55622260d/a3jrpvs_processed.png)
Transcribed Image Text:Element
III-V
IV-IV
II-VI
Material
C (diamond)
Ge
Si
Sn (gray)
GaAs
InAs
InSb
GaP
GaN
InN
InP
x-Sic
ZnO n-type
Cd Se
ZnS
PbS
IV-VI
"Longitudinal effective mass.
Transverse effective mass.
Light-hole effective mass.
"Heavy-hole effective mass.
Transition
I
I
PARALDDD
I
I
D
D
D
I
Gap energy
E₂[eV]
0K 300 K
5.48 5.47
0.74
0.66
1.17
0.09
1.52
0.42
0.23
2.34
3.50
1.42
3.03
3.42
1.85
3.84
0.28
1.12
Room-temp.
conductivity
0.17
2.26
3.36
0.7
1.35
2.99
3.35
1.70
3.68
0.41
22-m
10-12
2.2
9 x 10-4
0.08
1.42
0.36 10*
10
10-6
Transitions: D = direct
I = indirect
Mobility of
electrons
[m²
He
0.18
0.39
0.15
0.14
0.85
3.30
8.00
0.01
0.04
0.46
0.04
0.02
0.08
0.02
0.06
Mobility of
holes
m²
0.12
0.19
0.045
0.12
0.04
0.046
0.125
0.007
0.01
0.015
0.005
0.018
0.0005
0.07
Work function
(photoelectric)
o [cv]
4.8
4.6
3.6
4.9
5.3
Effective mass
ratio at 4 K
m²
mo
0.2
1.64*
0.08
0.98*
0.19b
0.067
0.023
0.014
0.82
0.19
m
mo
0.25
0.04€
0.28
0.16
0.49d
0.3⁰
0.082
0.40
0.40
0.60
0.60
0.077
0.60
0.27
0.13 0.45
0.40
0.25
0.64
1.00
0.25
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