Database System Concepts
Database System Concepts
7th Edition
ISBN: 9780078022159
Author: Abraham Silberschatz Professor, Henry F. Korth, S. Sudarshan
Publisher: McGraw-Hill Education
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1. A diamond structure is:
a. Similar to a FCC structure
b. Similar to two inter-penetrating FCC structure
c. Part of the trigonal system
d. Adopted by both silicon and germanium
2. A (100) plane is similar to a:
a. (111) plane
b. (010) plane
c. (110) plane
d. (200) plane
3. Find the maximum fraction of the unit cell volume, which can be filled by identical hard
spheres in Germanium:
a. 16%
b. 52%
c. 34%
d. 74%
4. In an intrinsic semiconductor
a. You have no charge carriers
b. You do not have any dopant
c. You have as many holes as electrons
d. You have only internal dopants
5. When an electron goes from the valence band to the conduction band, the process is called:
a. Drift
b. Diffusion
c. Recombination
d. Generation
6. In a doped semiconductor:
字数:780 回拼写检查
図文档校对
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Transcribed Image Text:closest one to your solution. 1. A diamond structure is: a. Similar to a FCC structure b. Similar to two inter-penetrating FCC structure c. Part of the trigonal system d. Adopted by both silicon and germanium 2. A (100) plane is similar to a: a. (111) plane b. (010) plane c. (110) plane d. (200) plane 3. Find the maximum fraction of the unit cell volume, which can be filled by identical hard spheres in Germanium: a. 16% b. 52% c. 34% d. 74% 4. In an intrinsic semiconductor a. You have no charge carriers b. You do not have any dopant c. You have as many holes as electrons d. You have only internal dopants 5. When an electron goes from the valence band to the conduction band, the process is called: a. Drift b. Diffusion c. Recombination d. Generation 6. In a doped semiconductor: 字数:780 回拼写检查 図文档校对 ASUS
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