closest one to your solution.1. A diamond structure is:a. Similar to a FCC structureb. Similar to two inter-penetrating FCC structurec. Part of the trigonal systemd. Adopted by both silicon and germanium2. A (100) plane is similar to a:a. (111) planeb. (010) planec. (110) planed. (200) plane3. Find the maximum fraction of the unit cell volume, which can be filled by identical hardspheres in Germanium:a. 16%b. 52%c. 34%d. 74%4. In an intrinsic semiconductora. You have no charge carriersb. You do not have any dopantc. You have as many holes as electronsd. You have only internal dopants5. When an electron goes from the valence band to the conduction band, the process is called:a. Driftb. Diffusionc. Recombinationd. Generation6. In a doped semiconductor:字数:780 回拼写检查図文档校对ASUS

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1. A diamond structure is: a. Similar to a FCC structure b. Similar to two inter-penetrating FCC structure c. Part of the trigonal system d. Adopted by both silicon and germanium 2. A (100) plane is similar to a: a. (111) plane b. (010) plane c. (110) plane d. (200) plane 3. Find the maximum fraction of the unit cell volume, which can be filled by identical hard spheres in Germanium: а. 16% b. 52% с. 34% d. 74% 4. In an intrinsic semiconductor a. You have no charge carriers b. You do not have any dopant c. You have as many holes as electrons d. You have only internal dopants 5. When an electron goes from the valence band to the conduction band, the process is called: a. Drift b. Diffusion c. Recombination d. Generation

1. A diamond structure is: a. Similar to a FCC structure b. Similar to two inter-penetrating FCC structure c. Part of the trigonal system d. Adopted by both silicon and germanium 2. A (100) plane is similar to a: a. (111) plane b. (010) plane c. (110) plane d. (200) plane 3. Find the maximum fraction of the unit cell volume, which can be filled by identical hard spheres in Germanium: а. 16% b. 52% с. 34% d. 74% 4. In an intrinsic semiconductor a. You have no charge carriers b. You do not have any dopant c. You have as many holes as electrons d. You have only internal dopants 5. When an electron goes from the valence band to the conduction band, the process is called: a. Drift b. Diffusion c. Recombination d. Generation

Database System Concepts

7th Edition

ISBN:9780078022159

Author:Abraham Silberschatz Professor, Henry F. Korth, S. Sudarshan

Publisher:Abraham Silberschatz Professor, Henry F. Korth, S. Sudarshan

Chapter1: Introduction

Section: Chapter Questions

Problem 1PE

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