(1): Assuming that all the component in the Fig.1 are perfectly matched find: A. The Max. efficiency and the power dissipated in the transistors under this condition. B. The Max. power dissipated in the transistors and the efficiency under this condition. Vin F Vcc +20 V R₁ C₁ 470 Ω ei 22 μF D₁ C3 Vout D2 470 με RL C₂ 1602 22 F W R₂ 470 Ω

Draw the load-line characteristics for the circuit shawn in the following fig and determine the Q point

(1) WhatsApp *Outcome A te X Shopping Cart × Pick Your Fanta X chegg privacy x Chegg.com - P X Electrical Engin X PDF File | C:/Users/Brenda/Downloads/Outcome%20A%20test%2011032021_protected.pdf + (D Page view A Read aloud V Draw E Highlight 3 of 6 Erase 2. A BJT transistor biased in a two-supply configuration is shown in the figure below. We assume that the requirement to design the circuit is that Ic=3mA and Vc=0V, given that we use F3 V for +Vcc and -VEE- +Vcc 2.1 With a simplified analysis to estimate the condition with very high ß values (B = 0), what values are required for RE and Rc? Rc Vc 2.2 If the BJT is specified to have a minimum ß of 90, find the largest value for RB that still ensures a voltage drop across RB equal to one-tenth of the voltage drop across RE. Rg RE 2.3 What standard 5%-resistor values would you use for RB, RE, and Rc? Make your selection such that the resistance -VEE values are somewhat lower than the calculated values to allow for the effects from low ß.…

IREF 1. Given Kn1=Kn2=0.5 mA/V?, VIN = 2V (all Ms), V+=+15V, V-= 0V and Ip2=lo we want lo=2mA. VGS3 a. Ignore A for now, what is Kn3? b. What is the range of voltages at the drain of M2 for that transistor to be in saturation? M1 M2 c. What is Ro, assuming A=1/50V? VGSI VGS2 V-