all parts please -1-8-5 × 10--4.5 × 10-7Qs(coul/cm²)4 × 10-712Vg- Vfb(V)FIGURE 5-36Consider an MOS capacitor fabricated on P-type Si substrate with a doping of-35×1016 cm with oxide thickness of 10nm and N+ poly-gate.(a) Find Cox, Vfb, and Vt.(b) Find the accumulation charge (C/cm²) at Vg =Vfb-1 V.(c) Find the depletion and inversion charge at Vg = 2 V.(d) Plot the total substrate charge as a function of V for Vo from -2 to 2 V.gg

STEP -1: Answer of (a):Given that,Permittivity of the oxide material, εox=3.45×10−11F/cm2thickness…

Answered: -1 -8 -5 × 10- -4.5 × 10-7 Qs(coul/cm²)…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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