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Technology Scaling And Research Of Flash Memory And Dram

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Technology Scaling and Research in Flash memory and DRAM Neil Patrick Crasto
CWID: 802993881
E-mail: neil.crasto@csu.fullerton.edu
Vaibhavi Patrick D’Mello
CWID: 893376210
E-mail: vaibhavidmello@csu.fullerton.edu

Abstract—As Dynamic Random Access Memory (DRAM) and Flash Nonvolatile Memory (NVM) innovations are entering their fourth decade of proceeding with development and advance; challenges in scaling these separate gadgets have surfaced both in handling and scaling. Although research has overcome the patterning issues, there are cost and electrical limitations faced by both DRAM and NAND. In this paper, we have studied the Feasibility of Embedded DRAM Cells, Embedded DRAM Technology for High-Performance DRAM and NAND flash memory and Challenges and Opportunities that are faced for Research in Emerging Memory Devices.
Keywords—Flash evolution, Flash memory, embedded DRAM, NAND flash memory,nonvolatile memory, NOR cell,DRAM system, power, performance, scaling, Bandwidth, bit error rate, cache, data retention, eDRAM.
I. INTRODUCTION
Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed in blocks instead of 1 byte at a time. Flash memory works like both RAM and ROM (Whatis TechTarget) where you can write information like you can write with RAM, but that information isn 't erased when the power is off, like it is with ROM (Dummies). It was developed from EEPROM (electrically erasable programmable

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